Abstract:Interband photoluminescence (PL) and absorption spectra of n-InN samples with Hall concentrations from 3.6 X 10(17) to 6 X 10(18) cm(-3) were studied. Sample thicknesses were in the range from 12 to 0.47 mu m. A set of lasers for the PL excitation in the energy range from 2.41 down to 0.81 eV was used. The well-resolved structure consisting of three peaks was observed in the PL spectra of the high-quality samples in the energy interval from 0.50 to 0.67 eV at liquid-helium and nitrogen temperatures. We attributed one of two low-energy features of the spectra to the recombination of degenerate electrons with the holes trapped by deep acceptors with a binding energy of E-da=0.050-0.055 eV, and the other one was attributed to the LO-phonon replica of this band. The higher-energy PL peak is considered as a complex band formed by two mechanisms. The first one is related to the transitions of electrons to the states of shallow acceptors with a binding energy of E-sh=0.005-0.010 eV and/or to the states of the Urbach tail populated by photoholes. The second mechanism contributing to this band is the band-to-band recombination of free holes and electrons. The relative intensities of the two higher-energy PL peaks were found to be strongly dependent on temperature and excitation power. A model approach taking into account the Urbach tails of conduction and valence bands and the acceptor states was developed. The calculations of PL and the absorption spectra have shown that the band gap of InN in the limit of zero temperature and zero electron concentration is close to 0.665-0.670 eV. The model calculations allowed us to explain the structures of all the spectra observed, their dependence on the excitation power, and the temperature variations of PL and the absorption spectra. The effective masses of electrons at the Gamma point equal to 0,042 and 0.07 of free-electron mass were tested in calculations. The conductivity band was assumed to be nonparabolic.

Valence Band Density of States of Zinc-Blende and Wurtzite InN from X-Ray Photoemission Spectroscopy and First-Principles Calculations

Ab initio calculations of indium arsenide in the wurtzite phase: structural, electronic and optical properties

First-principles calculation of electronic structures and optical properties of wurtzite InxAl1−xN alloys

The Study on Structural and Photoelectric Properties of Zincblende InGaN via First Principles Calculation

Unusual Properties of the Fundamental Band Gap of InN

Influence of Strain on the Band Gap Energy of Wurtzite InN

Microscopic Indium Distribution and Electron Localization in Zinc Blende InGaN Alloys and InGaN/GaN Strained Quantum Wells

Probing Valence Band Structure In Wurtzite Inp Nanowires Using Excitation Spectroscopy

Acceptor States in the Photoluminescence Spectra of N-Inn

The Structure of the [Zn_In - V_P] Defect Complex in Zn Doped InP

On the Crystalline Structure, Stoichiometry and Band Gap of Inn Thin Films

Doping‐dependence of Subband Energies in Quantized Electron Accumulation at InN Surfaces

All-electron study of InAs and GaAs wurtzite: structural and electronic properties

The Influence of Conduction Band Plasmons on Core-Level Photoemission Spectra of Inn

Electronic and optical properties of wurtzite GaN: A theoretical approach

Electron Localization and Emission Mechanism in Wurtzite (al, In, Ga)N Alloys

InN doped with Zn: Bulk and surface investigation from first principles

Density Functional Theory Study of ZnIn2S4 and CdIn2S4 Polymorphs Using Full‐Potential Linearized Augmented Plane Wave Method and Modified Becke–Johnson Potential

Origin Of Electron Accumulation At Wurtzite Inn Surfaces

First-principles calculations to investigate structural, electronic and optical properties of two-dimensional ZnIn2S4

Determination of the Branch-Point Energy of InN: Chemical Trends in Common-Cation and Common-Anion Semiconductors