Abstract:The structural and electronic properties of the wurtzite phase of the InAs and GaAs compounds are, for the first time, studied within the framework of Density Functional Theory (DFT). We used the full-potential linearized augmented plane wave (LAPW) method and the local density approximation (LDA) for exchange and correlation and compared the results to the corresponding pseudopotential calculations. From the structural optimization of the wurtzite polymorph of InAs we found that the c/a ratio is somewhat greater than the ideal one and that the internal parameter u/c has a value slightly smaller than the ideal one. In the all-electron approach the wurtzite polymorph has a smaller equilibrium volume per InAs pair and a higher binding energy when compared to the zinc-blende phase whereas the situation is reversed in the pseudo treatment. The energy differences are, however, smaller than the accuracy of standard density-functional codes (~30 meV) and a theoretical prediction of the relative stability of the two phases cannot be made. In order to investigate the possibility of using an LDA calculation as a starting point for many-body calculations of excitations properties, we here also present the band-structures of these materials. The bands are calculated with and without relativistic effects. In InAs we find that the energy gaps of both polymorphs are positive when obtained from a non-relativistic calculation and negative otherwise. For both semiconductors, we determine the spin-orbit splittings for the zinc-blende and the wurtzite phases as well as the crystal-field splittings for the new wurtzite polymorphs.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the research on the structural and electronic properties of InAs and GaAs in the wurtzite structure. Specifically, the researchers hope to understand the characteristics of these compounds in the wurtzite phase, because this phase is of great significance in nanowires (NW), while previous experimental research on the wurtzite phase of these materials has been very limited, and there has also been less theoretical research. ### Main problems: 1. **Structural optimization**: Research on the lattice parameters (such as the c/a ratio and the internal parameter u/c) of InAs and GaAs in the wurtzite phase, as well as the equilibrium volume and binding energy. 2. **Electronic structure**: Calculate the band structure of InAs and GaAs in the wurtzite phase, and explore the influence of different relativistic effects (non - relativistic, scalar - relativistic, and relativistic including spin - orbit coupling) on the band structure. 3. **Stability comparison**: Evaluate the relative stability of the two phases by comparing the energy differences between the wurtzite phase and the common zinc - blende phase. 4. **Splitting energy calculation**: Calculate the spin - orbit splitting and crystal - field splitting of InAs and GaAs in the wurtzite phase for the first time. ### Research background: - InAs and GaAs are usually in the zinc - blende structure at normal temperature and pressure, but will form the wurtzite structure under certain conditions (such as growing on a specific substrate). - The wurtzite phase of these materials exhibits unique optical and electrical properties in nanowires, so the research on their properties is crucial for understanding experimental data and developing new devices. ### Method: - Use the full - potential linearized augmented plane - wave (FP - LAPW) method within the framework of all - electron density functional theory (DFT) for calculation. - Compare the results under different relativistic approximations and contrast them with the calculations based on pseudopotentials. ### Key findings: - The c/a ratio of InAs in the wurtzite phase is slightly larger than the ideal value, and the internal parameter u/c is slightly smaller than the ideal value. - From the energy perspective, InAs in the wurtzite phase has a smaller equilibrium volume and a higher binding energy, but this difference cannot determine its relative stability within the numerical accuracy range. - The band structure calculation of GaAs shows that under the scalar - relativistic approximation, GaAs is correctly predicted to be a semiconductor, although the band gap calculated by LDA is much smaller than the experimental value. - Calculate the spin - orbit splitting and crystal - field splitting of InAs and GaAs in the wurtzite phase for the first time. In general, this paper aims to fill the theoretical research gap of InAs and GaAs in the wurtzite phase and provide basic data for subsequent many - body calculations.

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