Abstract:The electronic band structure of complex nanostructured semiconductors has a considerable effect on the final electronic and optical properties of the material and, ultimately, on the functionality of the devices incorporating them. Valence electron energy-loss spectroscopy (VEELS) in the transmission electron microscope (TEM) provides the possibility of measuring this property of semiconductors with high spatial resolution. However, it still represents a challenge for narrow-bandgap semiconductors, since an electron beam with low energy spread is required. Here we demonstrate that by means of monochromated VEELS we can study the electronic band structure of narrow-gap materials GaSb and InAs in the form of heterostructured nanowires, with bandgap values down to 0.5 eV, especially important for newly developed structures with unknown bandgaps. Using complex heterostructured InAs-GaSb nanowires, we determine a bandgap value of 0.54 eV for wurtzite InAs. Moreover, we directly compare the bandgaps of wurtzite and zinc-blende polytypes of GaSb in a single nanostructure, measured here as 0.84 and 0.75 eV, respectively. This allows us to solve an existing controversy in the band alignment between these structures arising from theoretical predictions. The findings demonstrate the potential of monochromated VEELS to provide a better understanding of the band alignment at the heterointerfaces of narrow-bandgap complex nanostructured materials with high spatial resolution. This is especially important for semiconductor device applications where even the slightest variations of the electronic band structure at the nanoscale can play a crucial role in their functionality.

Wurtzite/Zincblende Crystal Phase GaAs Heterostructures in the Tight Binding Approximation

Ab initio calculations of indium arsenide in the wurtzite phase: structural, electronic and optical properties

All-electron study of InAs and GaAs wurtzite: structural and electronic properties

Charge separation in wurtzite/zinc-blende heterojunction GaN nanowires.

Unveiling Variations in Electronic and Atomic Structures Due to Nanoscale Wurtzite and Zinc Blende Phase Separation in GaAs Nanowires

Lattice-constant and band-gap tuning in wurtzite and zincblende BInGaN alloys

Different Doping Behaviors of Silicon in Zinc Blende and Wurtzite GaAs Nanowires: Implications for Crystal-Phase Device Design

Electronic and optical properties of wurtzite GaN: A theoretical approach

Quasi-in-situ Study of Wurtzite/zinc-Blende GaN Nanowires by TEM and Cathodoluminescence

Revisiting the Zinc-Blende/Wurtzite Heterocrystalline Structure in CdS

Elastic and piezoelectric properties of zincblende and wurtzite crystalline nanowire heterostructures.

Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures

Strain-Modulated Photocatalytic Performance of Janus WSSe/g-GaN Heterostructures

Electron-hole interactions in coupled InAs-GaSb quantum dots based on nanowire crystal phase templates

Structural reconstruction and visible-light absorption versus internal electrostatic field in two-dimensional GaN-ZnO alloys.

Electronic band structure of narrow-bandgap p-n nanojunctions in heterostructured nanowires measured by electron energy loss spectroscopy

Structural stability, tunable electronic and optical properties of two-dimensional WS2 and GaN heterostructure: First-principles calculations

Electronic and hole minibands in quantum wire arrays of different crystallographic structure

Electronic band structure engineering in InAs/InSbAs and InSb/InSbAs superlattice heterostructures

Gate controllable band alignment transition in 2D black-arsenic/WSe2 heterostructure

Structural and optical properties of high quality zinc-blende/wurtzite GaAs hetero-nanowires