Abstract:The optical dielectric function of ZnGeN$_2$ is calculated from the interband transitions using the energy bands calculated in the quasiparticle self-consistent (QS)$G\hat W$ method using two different levels of approximation: the independent particle approximation (IPA) and the Bethe-Salpeter Equation (BSE) approach. The first allows us to relate peaks in $\varepsilon_2(\omega)$ to specific bands and {\bf k}-points but does not include excitonic effects, while the latter does. The corresponding changes in the shape of $\varepsilon_2(\omega)$ are found to be similar to those in GaN. The screened Coulomb interaction $\hat W$ is here calculated including electron-hole interactions in the polarization function and gives a band structure already going beyond the random phase approximation. The static dielectric constants including only electronic screening, commonly referred to as $\varepsilon^\infty$, were calculated separately by extrapolating the wave vector dependent macroscopic $\varepsilon_M({\bf q},\omega=0)$ for ${\bf q}\rightarrow0$. Below the quasiparticle gap, we find three bound excitons optically active for different polarization. The convergence of these bound excitons with respect to the density of the {\bf k}-mesh used in the BSE is studied and found to require a fine mesh. It is also found that these bound excitons originate from only the lowest conduction band and the top three valence bands. To incorporate the lattice screening, we include a scaling factor $(\varepsilon^\infty/\varepsilon^0)^2$, which allows us to obtain exciton binding energies of the correct order of magnitude similar to those in GaN. The excitons are related to each of the three fold split valence bands and the splittings of the latter are also studied as function of strain. Finally, a relation between the anisotropic effective masses and the valence band splitting is pointed out and explained.

Electronic and optical properties of wurtzite GaN: A theoretical approach

A theoretical study of electronic and optical properties in wurtzite GaN

Electronic and Optical Properties of Unstrained and Strained Wurtzite Gan

Calculated Electronic and Related Properties of Wurtzite and Zinc Blende Gallium Nitride (GaN)

Electronic Structures of Wurtzite Gan with Ga and N Vacancies

Electronic and Optical Properties of Strained Wurtzite Gan

Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures

Wurtzite/Zincblende Crystal Phase GaAs Heterostructures in the Tight Binding Approximation

Comparison of interband related optical transitions and excitons in ZnGeN$_2$ and GaN

Lattice dynamics of wurtzite semiconductors gan and a1n

Studies on Linear and Nonlinear Intersubband Optical Absorptions in A Wurtzite Algan/Gan Coupling Quantum Well

First principles calculation of electronic properties and effective mass of zinc-blende GaN

Quantum Size Effect on the Luminous Properties of Excitonic States in a Quasi-One-dimensional Wurtzite GaN Nanowire: Two-parameter Variational Approach

Structural and Thermodynamic Properties of Gallium Arsenide with Hexagonal Wurtzite Structure from First-Principles Analysis

Polaron Effect on Linear and Nonlinear Intersubband Optical Absorption of a Wurtzite GaN-based Nanowire

Ab Initio Calculation of Dielectric Function in Wurtzite GaN Based on Walter’s Model

Band structures for Ge3N4 polymorphs studied by DFT-LDA and GWA

Polaronic Self-Trapped Energy and Effective Mass of A Cylindrical Wurtzite Gan Nanowire

Valence Band Density of States of Zinc-Blende and Wurtzite InN from X-Ray Photoemission Spectroscopy and First-Principles Calculations

The Study on Structural and Photoelectric Properties of Zincblende InGaN via First Principles Calculation

Lattice-constant and band-gap tuning in wurtzite and zincblende BInGaN alloys