Abstract:We conduct a comprehensive theoretical analysis of wurtzite GaxIn1-xN ternary alloys, focusing on their structural, electronic, elastic, piezoelectric, and dielectric properties through rigorous first-principles calculations. Our investigation systematically explores the influence of varying Ga composition (x = 0%, 25%, 50%, 75%, 100%) on the alloy properties. Remarkably, we observe a distinctive non-linear correlation between the band gap and Ga concentration, attributable to unique slopes in the absolute positions of the valence band maximum and conduction band minimum with respect to Ga concentration. Our effective band structure analysis reveals the meticulous preservation of Bloch characters near band extrema, minimizing charge carrier scattering. Furthermore, we scrutinize deviations from linear Vegard-like dependence in elastic, piezoelectric, and dielectric constants. Additionally, our calculations encompass various optical properties, including absorption coefficient, reflectivity, refractive index, energy loss function, and extinction coefficient. We analyze their trends with photon energy, providing valuable insights into the optical behavior of GaxIn1-xN alloys. Our results, in excellent agreement with available experimental data, significantly contribute to a deeper understanding of the alloys' electronic properties. This study offers valuable insights that may illuminate potential applications of GaxIn1-xN alloys in diverse technological fields.

First principles calculation of electronic properties and effective mass of zinc-blende GaN

First-principle Calculations of the Structure and Elastic Properties of GaAs under Pressure

First-Principles Study Of Gamma-Si3n4 With Generalized Gradient Approximation And Local Density Approximation

Calculation of Electron Transport in Gaas Nanoscale Junctions Using First-Principles

The Study on Structural and Photoelectric Properties of Zincblende InGaN via First Principles Calculation

First-Principles Calculations for Elastic Properties of ZnS under Pressure

Calculated Electronic and Related Properties of Wurtzite and Zinc Blende Gallium Nitride (GaN)

Electronic Structure of III-V Zinc-Blende Semiconductors from First Principles

First-principles Calculations of Band-Gap Properties of Zinc-Blende B X Ga 1-X N and B X Ga 1-X N Y As 1-Y Alloys

Ab Initio Calculation of Dielectric Function in Wurtzite GaN Based on Walter’s Model

First-principles study on the electronic structures of Gd pnictides

Electronic and optical properties of wurtzite GaN: A theoretical approach

First Principle Calculation of Magnetic Properties of Doped Mn:ZnGa2S4

First-principle Calculation for Luminescent-Effects of Si and Zn Impurities in GaN

First-principles Study on Ge1−xSnx-Si Core-Shell Nanowire Transistors

Application of k . p method on band structure of GaAs obtained through joint density functional theory

Compositional effects on structural, electronic, elastic, piezoelectric and dielectric properties of GaInN alloys: a first-principles study

A theoretical study of electronic and optical properties in wurtzite GaN

First-principles Investigation on Optical Properties of GaN and InGaN Alloys

First-principles study of extensive dopants in wurtzite ZnO

First principles calculations on theoretical band gap improvement of IIIA-VA zinc-blende semiconductor InAs