Abstract:In this work, the formation energy, band structure, state density, differential charge density andoptoelectronic properties of undoped beta-Ga2O3 and Si doped beta-Ga2O3 are calculated by using GGA+U methodbased on density functional theory. The results show that the Si-substituted tetrahedron Ga(1) is more easilysynthesized experimentally, and the obtained beta-Ga2O3 band gap and Ga-3d state peak are in good agreementwith the experimental results, and the effective doping is more likely to be obtained under oxygen-poorconditions. After Si doping, the total energy band moves toward the low-energy end, and Fermi level enters theconduction band, showing n-type conductive characteristic. The Si-3s orbital electrons occupy the bottom of theconduction band, the degree of electronic occupancy is strengthened, and the conductivity is improved. Theresults from dielectric function epsilon 2(omega) show that with the increase of Si doping concentration, the ability tostimulate conductive electrons first increases and then decreases, which is in good agreement with thequantitative analysis results of conductivity. The optical band gap increases and the absorption band edge risesslowly with the increase of Si doping concentration. The results of absorption spectra show that Si-doped beta-Ga2O3 has the ability to realize the strong deep ultraviolet photoelectric detection. The calculated resultsprovide a theoretical reference for further implementing the experimental investigation and the optimizationinnovation of Si-doped beta-Ga2O3 and relative device design

First-Principles Study Of Gamma-Si3n4 With Generalized Gradient Approximation And Local Density Approximation

First-principles study on the electronic structures of Gd pnictides

First-principles Study of Vibrational and Dielectric Properties Ofβ−si3n4

First-Principles Studies of the Structural, Elastic, Electronic and Thermal Properties of Ni3nb

Theoretical investigations of the high-pressure optical properties of γ-Si 3N 4

First-Principles Investigation Of Electronic Structural And Optical Properties Of Rare Earth Doped Beta-Si3n4 Crystals

High-Pressure Electronic and Optical Properties of Alpha-Si3n4

Ab Initio Study of the Ge3N4 Semiconductor Materials in its Cubic γ Phase: A Computer Simulation

First Principles Calculations of Electronic Structures and Optical Properties of Al- and Ca-doped Β-Si3n4

First-principles Calculation of Electronic Structure and Optical Properties of Si : Ge

Studies on the electronic structure and the elastic properties of the Gd2SiO5 crystal with GGA plus U approach

First‐Principles Calculations of Electronic Structure and Optical Properties of Si‐Doped and Vacancy Β‐ga2o3

First-principles Study on the Electronic Structure and Phase Transition of Α-, Β- and Γ-Si3n4

Investigation of Electronic Structure and Optoelectronicproperties of Si-doped Β-Ga2o3using GGA+Umethod Based on First-Principle

Investigation of Electronic Structures and Optical Properties of Β-Si3n4 Doped with IV A Elements: A First-Principles Simulation

First-Principles Investigation of Electronic Structural and Optical Properties of Rare Earth Doped β-Si<sub>3</sub>N<sub>4</sub> Crystals

<i>Ab Initio</i> Study of the Ge<sub>3</sub>N<sub>4</sub> Semiconductor Materials in its Cubic γ Phase: A Computer Simulation

Theoretical Investigations of the High-Pressure Optical Properties of Γ-Si<sub>3</sub>n<sub>4</sub>

First-Principles Study of Electronic Structure and Elastic Properties of Si Doping Ti3Al1-xSixC2 Solid Solutions

Pseudo-Potential Calculations of Structural, Elastic and Thermal Properties of Si<sub>3</sub>N<sub>4</sub>

First-principles Study of Electronic, Dynamical and Thermodynamic Properties of Γ-Li4sio4