Abstract:The optical dielectric function of ZnGeN$_2$ is calculated from the interband transitions using the energy bands calculated in the quasiparticle self-consistent (QS)$G\hat W$ method using two different levels of approximation: the independent particle approximation (IPA) and the Bethe-Salpeter Equation (BSE) approach. The first allows us to relate peaks in $\varepsilon_2(\omega)$ to specific bands and {\bf k}-points but does not include excitonic effects, while the latter does. The corresponding changes in the shape of $\varepsilon_2(\omega)$ are found to be similar to those in GaN. The screened Coulomb interaction $\hat W$ is here calculated including electron-hole interactions in the polarization function and gives a band structure already going beyond the random phase approximation. The static dielectric constants including only electronic screening, commonly referred to as $\varepsilon^\infty$, were calculated separately by extrapolating the wave vector dependent macroscopic $\varepsilon_M({\bf q},\omega=0)$ for ${\bf q}\rightarrow0$. Below the quasiparticle gap, we find three bound excitons optically active for different polarization. The convergence of these bound excitons with respect to the density of the {\bf k}-mesh used in the BSE is studied and found to require a fine mesh. It is also found that these bound excitons originate from only the lowest conduction band and the top three valence bands. To incorporate the lattice screening, we include a scaling factor $(\varepsilon^\infty/\varepsilon^0)^2$, which allows us to obtain exciton binding energies of the correct order of magnitude similar to those in GaN. The excitons are related to each of the three fold split valence bands and the splittings of the latter are also studied as function of strain. Finally, a relation between the anisotropic effective masses and the valence band splitting is pointed out and explained.

A theoretical study of electronic and optical properties in wurtzite GaN

Electronic and optical properties of wurtzite GaN: A theoretical approach

Electronic and Optical Properties of Unstrained and Strained Wurtzite Gan

Quasiparticle Band Structures And Optical Properties Of Monolayer Zrnx (X=Cl, Br, I) Under Exciton Effect

Electronic and Optical Properties of Strained Wurtzite Gan

Studies on Linear and Nonlinear Intersubband Optical Absorptions in A Wurtzite Algan/Gan Coupling Quantum Well

Calculated Electronic and Related Properties of Wurtzite and Zinc Blende Gallium Nitride (GaN)

Electronic Structures of Wurtzite Gan with Ga and N Vacancies

First-principles Investigation on Optical Properties of GaN and InGaN Alloys

Compositional effects on structural, electronic, elastic, piezoelectric and dielectric properties of GaInN alloys: a first-principles study

Ab Initio Calculation of Dielectric Function in Wurtzite GaN Based on Walter’s Model

Lattice Dynamics of Wurtzite Semiconductors Gan and Aln

Zone-center Optical Phonons in Wurtzite GaN and AlN

Valence Band Offset of Β-Ga2o3/wurtzite GaN Heterostructure Measured by X-ray Photoelectron Spectroscopy.

Electron Localization and Emission Mechanism in Wurtzite (al, In, Ga)N Alloys

Band structures for Ge3N4 polymorphs studied by DFT-LDA and GWA

Polaron Effect on Linear and Nonlinear Intersubband Optical Absorption of a Wurtzite GaN-based Nanowire

Comparison of interband related optical transitions and excitons in ZnGeN$_2$ and GaN

Wurtzite/Zincblende Crystal Phase GaAs Heterostructures in the Tight Binding Approximation

Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures

Quantum Size Effect on the Luminous Properties of Excitonic States in a Quasi-One-dimensional Wurtzite GaN Nanowire: Two-parameter Variational Approach