Abstract:Strain inevitably exists in practical GaN-based devices due to the mismatch of lattice structure and thermal expansion brought by heteroepitaxial growth and band engineering, and it significantly influences the thermal properties of GaN. In this work, thermal transport properties of GaN considering the effects from biaxial strain and electron-phonon coupling (EPC) are investigated using the first principles calculation and phonon Boltzmann transport equation. The thermal conductivity of free GaN is 263 and 257 W/mK for in-plane and cross-plane directions, respectively, which are consistent better with the experimental values in the literature than previous theoretical reports and show a nearly negligible anisotropy. Under the strain state, thermal conductivity changes remarkably. In detail, under +5% tensile strain state, average thermal conductivity at room temperature decreases by 63%, while it increases by 53% under the −5% compressive strain, which is mostly attributed to the changes in phonon relaxation time. Besides, the anisotropy of thermal conductivity changes under different strain values, which may result from the weakening effect from strain induced piezoelectric polarization. EPC is also calculated from the first principles method, and it is found to decrease the lattice thermal conductivity significantly. Specifically, the decrease shows significant dependence on the strain state, which is due to the relative changes between phonon-phonon and electron-phonon scattering rates. Under a compressive strain state, the decreases of lattice thermal conductivity are 19% and 23% for in-plane and cross-plane conditions, respectively, comparable with those under a free state. However, the decreases are small under the tensile strain state, because of the decreased electron-phonon scattering rates and increased phonon anharmonicity.

Electronic and Optical Properties of Strained Wurtzite Gan

Electronic and Optical Properties of Unstrained and Strained Wurtzite Gan

Strain Effects on the Band Structures of Gan

Modification of the Valence Band Structures of Polar and Nonpolar Plane Wurtzite-Gan by Anisotropic Strain

Phonon Properties and Thermal Conductivity of GaN Nanofilm under Prestress and Surface/interface Stress

Electronic and optical properties of wurtzite GaN: A theoretical approach

A theoretical study of electronic and optical properties in wurtzite GaN

Uniaxial strain effect on the electronic and optical properties of wurtzite GaN-AlGaN quantum-well lasers

Strain Effect on Optical Polarization Properties of a ‐plane GaN on R ‐plane Sapphire

In-plane Anisotropic Photoluminescence of C-plane GaN under Asymmetric Biaxial Strain

Anisotropic Crystallographic Properties, Strain, and Their Effects on Band Structure of M-Plane Gan on Lialo2(100)

The Bandgap Distribution Investigated Across the Strain-Induced Bending ZnO Nanowire

Electronic Structures of Wurtzite Gan with Ga and N Vacancies

Bandgap engineering and manipulating electronic and optical properties of ZnO nanowires by uniaxial strain.

A First-Principles Study of Hydrostatic Strain Engineering on the Electronic Properties of Β-Ga2o3

Strain Effect on Polarized Optical Properties of C ‐plane GaN and M ‐plane GaN

Strain-induced Enhancement of 2D Electron Gas Density in AlGaN/GaN Heterojunction: A First-principles Study

Biaxial Stress-Dependent Optical Band Gap, Crystalline, and Electronic Structure in Wurtzite ZnO: Experimental and Ab Initio Study

Strain-tunable energy band parameters of graphene-like GaN

Thermal transport properties of GaN with biaxial strain and electron-phonon coupling

Bending strain effects on the optical and optoelectric properties of GaN nanowires