Abstract:With the development of power devices towards high integration and power, the electrical and thermal stresses per unit area become more concentrated and intensified. The impact of cross-plane strain resulting from inverse piezoelectric effect and thermal expansion on power devices cannot be ignored. Cross-plane strain has a substantial influence on the thermal properties of GaN. However, the research on the influence of cross-plane strain on the thermal conductivity of GaN has not been reported in the literature. Based on the first-principles calculation method and the phonon Boltzmann transport equation, the influence of cross-plane strain on the thermal conductivity and phonon characteristics of the GaN lattice is systematically studied in this study. The thermal conductivity of GaN has anisotropy and increases significantly with the decrease in temperature. The thermal conductivity of GaN at room temperature under the free state is calculated to be 257 and 275 W/(mK) for in-plane (k(perpendicular to)) and cross-plane (k(parallel to)) directions, respectively. Compared with previous theoretical reports, our calculation results are more consistent with the existing experiment values. Under the state of cross-plane strain, the lattice thermal conductivity changes remarkably. In detail, the average thermal conductivity at room temperature decreased by 35 % under a 5 % cross-plane tensile strain state, while it increased by 11.5 % under a 5 % cross-plane compressive strain state. According to the calculation results, the influence of cross-plane on lattice thermal conductivity is mainly due to the change in phonon lifetime. The analysis of two mechanisms of phonon lifetime suppression indicates that the cross-plane strain will significantly change the frequency of the high-frequency optical acoustic branch. This result leads to a change in the phonon scattering process and thus affects the phonon lifetime. Besides, the anisotropy of thermal conductivity changes under different strain values, which may be due to the weakened piezoelectric polarization effect induced by strain.

Strain Effect on Polarized Optical Properties of C ‐plane GaN and M ‐plane GaN

Strain Effects on the Polarized Optical Properties of Ingan with Different in Compositions

Strain Effect on Optical Polarization Properties of a ‐plane GaN on R ‐plane Sapphire

In-plane Anisotropic Photoluminescence of C-plane GaN under Asymmetric Biaxial Strain

Modification of the Valence Band Structures of Polar and Nonpolar Plane Wurtzite-Gan by Anisotropic Strain

Strain Effect on the Performance of Proton-Irradiated GaN-based HEMT

Compressive Strain Induced Enhancement of Transverse-Electric Polarized Ultraviolet Light Emission for AlGaN Quantum Wells

Strain Effect on the Optical Polarization Properties of C-Plane Al_026Ga_074N/GaN Superlattices

Optical Polarization Characteristics of C-Plane InGaN/GaN Asymmetric Nanostructures

Strain Effect on Intersubband Transition in a GaN/AlGaN Single Quantum Well on Arbitrary Crystal Planes

Strain Effects on the Band Structures of Gan

Polarization and Temperature Dependence of Photoluminescence of M-Plane GaN Grown on Γ-Lialo2 (100) Substrate

Strain-modulated Valence Band Engineering for Enhancement of Surface Emission in Polar and Nonpolar Plane AlN Films

Anisotropic Crystallographic Properties, Strain, and Their Effects on Band Structure of M-Plane Gan on Lialo2(100)

Uniaxial strain effect on the electronic and optical properties of wurtzite GaN-AlGaN quantum-well lasers

Optical Anisotropic Properties of M-Plane GaN Film Grown by Metalorganic Chemical Vapor Deposition

First-Principles Study on Thermal Transport Properties of Gan under Different Cross-Plane Strain

Non-polar M-Plane GaN Film and Polarized InGaN/GaN LED Grown on LiAlO 2 (001) Substrates

Strain Effect on Photoluminescences from InGaN MQWs with Different Barriers Grown by MOCVD

Strain- and Compositional Modulation of the Near-Band-Edge Band Structures of AlN and Its Ternary Alloys with GaN and InN

Bending strain effects on the optical and optoelectric properties of GaN nanowires