Abstract:We report on fundamental structural and optical properties of lateral polarity junctions in GaN. GaN with Ga- to N-polar junctions was grown on sapphire using an AlN buffer layer. Results from scanning electron microscopy and Raman spectroscopy measurements indicate a superior quality of the Ga-polar GaN. An extremely strong luminescence signal is observed at the inversion domain boundary (IDB). Temperature dependent micro photoluminescence measurements are used to reveal the recombination processes underlying this strong emission. At 5 K the emission mainly arises from a stripe along the inversion domain boundary with a thickness of 4-5 μm. An increase of the temperature initially leads to a narrowing to below 2 μm emission area width followed by a broadening at temperatures above 70 K. The relatively broad emission area at low temperatures is explained by a diagonal IDB. It is shown that all further changes in the emission area width are related to thermalization effects of carriers and defects attracted to the IDB. The results are successfully used to confirm a theoretical model for GaN based lateral polarity junctions. Due to the strong and pronounced emission of IDBs even at elevated temperatures, it is demonstrated that lateral polarity junctions exhibit a strong potential for future high efficiency devices.

Polarization and Temperature Dependence of Photoluminescence of M-Plane GaN Grown on Γ-Lialo2 (100) Substrate

Non-polar M-Plane GaN Film and Polarized InGaN/GaN LED Grown on LiAlO 2 (001) Substrates

Photoluminescence and Raman Scattering Signatures of Anisotropic Optical Properties in Freestanding M-, A- and C-Plane GaN Substrates

Optical Anisotropic Properties of M-Plane GaN Film Grown by Metalorganic Chemical Vapor Deposition

Anisotropic Crystallographic Properties, Strain, and Their Effects on Band Structure of M-Plane Gan on Lialo2(100)

Structural and Optical In-Plane Anisotropy of M-Plane GaN

Structural and Optical Properties of Nonpolar m-Plane GaN and GaN-Based LEDs on γ-LiAlO <sub>2</sub>

Strain Effect on Polarized Optical Properties of C ‐plane GaN and M ‐plane GaN

Structural and Optical Properties of Nonpolar m-Plane GaN and GaN-Based LEDs on ?-LiAlO2

Influence of Polarities on Optical Properties of Mg-doped GaN Films Grown on GaN Free-Standing Substrates by MOCVD

Structural And Optical Properties Of Nonpolar M-Plane Gan And Gan-Based Leds On Gamma-Lialo2

Strain Effect on Optical Polarization Properties of a ‐plane GaN on R ‐plane Sapphire

In-plane Anisotropic Photoluminescence of C-plane GaN under Asymmetric Biaxial Strain

Investigation on the Properties of Nonpolar M-Plane GaN-Based Light-Emitting Diode Wafers Grown on LiGaO2(100) Substrates

Temperature Dependent Photoluminescence of Lateral Polarity Junctions of Metal Organic Chemical Vapor Deposition Grown Gan

Analysis of the anisotropy in an m-plane GaN film via HVPE on a γ-LiAlO_2 substrate

Large Degree of Polarization of Photoluminescence Caused by Anisotropic Strain in Nonpolar A-Plane Mg_xZn_1−xO Layers Grown by Plasma-Assisted Molecular Beam Epitaxy

Study of (112̄0) non polar a-plane GaN on the (11-02) r-plane sapphire

Modification of the Valence Band Structures of Polar and Nonpolar Plane Wurtzite-Gan by Anisotropic Strain

Temperature-dependent Polarization Characteristics in Al0.25Ga0.75N/AlN/GaN Heterostructure

Analysis of the Anisotropy in Anm-Plane GaN Film Via HVPE on a Γ-Lialo2substrate