Abstract:The valence subband structures of uniaxial-strained wurtzite (WZ) GaN-AlGaN quantum wells (QW's) are calculated using multiband effective-mass theory. The optical gain is investigated using a numerical approach in which we account for the subband structure modification and mixing due to the anisotropic strain in the QW plane. We show that the mixing of the HH and LH bases in the uniaxial-strained (0001) GaN-AlGaN QW decouples |X> and |Y> at the /spl Gamma/ point, giving two topmost subbands, Y1 and X1, which can be more widely separated than the HH1 and LH1 subbands in the biaxial-strained (0001) GaN-AlGaN QW. We resolve the states of the subband dispersion in terms of the |X>, |Y>, and |Z> bases, and show the compositional variation as a function of the in-plane wavevector. Under uniaxial strain, it is possible to exploit the existence of the preferred symmetry at the valence band maximum and the reduced band-edge density-of-states due to the anisotropic in-plane energy dispersion to achieve lower transparency carrier and current densities and higher differential gain in comparison with a pseudomorphic biaxial-strained QW. We show that, for a QW laser structure with the optical cavity along the x axis, uniaxial compressive strain in the y direction shows greater improvement than the uniaxial tensile strain in the x direction of the same magnitude. Thus, a suitable uniaxial strain could be used to improve the threshold performance of WZ GaN-based QW lasers.

Strain Effect on Optical Polarization Properties of a ‐plane GaN on R ‐plane Sapphire

Strain Effect on Polarized Optical Properties of C ‐plane GaN and M ‐plane GaN

In-plane Anisotropic Photoluminescence of C-plane GaN under Asymmetric Biaxial Strain

Strain Effects on the Polarized Optical Properties of Ingan with Different in Compositions

Modification of the Valence Band Structures of Polar and Nonpolar Plane Wurtzite-Gan by Anisotropic Strain

In-Plane Optical Anisotropy of A-Plane Gan Film on R-Plane Sapphire Grown by Metal Organic Chemical Vapour Deposition

Strain Effect on the Optical Polarization Properties of C-Plane Al_026Ga_074N/GaN Superlattices

Optical Polarization Characteristics of C-Plane InGaN/GaN Asymmetric Nanostructures

Strain Effect on Intersubband Transition in a GaN/AlGaN Single Quantum Well on Arbitrary Crystal Planes

Influence of strains on the optical properties of non-polar and semi-polar gallium nitride based LEDs

Compressive Strain Induced Enhancement of Transverse-Electric Polarized Ultraviolet Light Emission for AlGaN Quantum Wells

Anisotropic Crystallographic Properties, Strain, and Their Effects on Band Structure of M-Plane Gan on Lialo2(100)

Uniaxial strain effect on the electronic and optical properties of wurtzite GaN-AlGaN quantum-well lasers

Structural and Optical In-Plane Anisotropy of M-Plane GaN

Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties

Influence of GaN Polarity and Intermediate-Temperature Buffer Layers on Strain Relaxation and Defects

Bending strain effects on the optical and optoelectric properties of GaN nanowires

Optical Anisotropic Properties of M-Plane GaN Film Grown by Metalorganic Chemical Vapor Deposition

Polarization and Temperature Dependence of Photoluminescence of M-Plane GaN Grown on Γ-Lialo2 (100) Substrate

Stress and Its Effect on Optical Properties of GaN Epilayers Grown on Si(111), 6H-Sic(0001), and C-Plane Sapphire

Strain Effects on the Band Structures of Gan