Abstract:Si-doped GaN films were grown epitaxially on c-sapphire by rf magnetron reactive co-sputtering of GaAs and Si at various partial pressures of N2 in Ar–N2 growth atmosphere. Energy dispersive x-ray spectroscopy revealed ∼2 at.% Si in all the films, but the N/Ga ratio decreased substantially as N2 percentage was reduced from 100% to 10%. The lattice parameters (a and c) were obtained independently to determine the in-plane and out-of-plane components of strain in films, which were analyzed to deduce the hydrostatic and biaxial strain contributions. High resolution x-ray diffraction revealed the dominant presence of edge dislocations (∼1012 cm−2) in the films grown at 30%–100% N2, which decreases and becomes comparable to the density of screw dislocations (∼1011 cm−2) at lower N2 percentages. The films grown at 75%–100% N2 displayed compressive biaxial stress along with large hydrostatic strain and micro-strain due to the incorporation of nitrogen at interstitial locations and grain boundaries. Both hydrostatic strain and micro-strain decrease in the films grown below 75% N2, in which, a reversal of biaxial stress to tensile is seen due to the prevalence of in-plane tensile stress generated during coalescence. The decrease of tensile stress in films grown below 30% N2, accompanied by increase in micro-strain and hydrostatic strain are ascribed to Ar incorporation and voided morphology. The presence of Si does not have a significant influence on residual stress of films and appears to be masked by the dominant growth-related intrinsic effects.

Stress and Its Effect on Optical Properties of GaN Epilayers Grown on Si(111), 6H-Sic(0001), and C-Plane Sapphire

The Testing of Stress-Sensitivity in Heteroepitaxy GaN/Si by Raman Spectroscopy

Effects of Surface/interface Stress on Phonon Properties and Thermal Conductivity in AlN/GaN/AlN Heterostructural Nanofilms

Thermal Stress Analysis and Structural Design of AlxGa1−xN/GaN Epilayers Based on Si Substrate

Influence of Surface/interface Stress on Thermal Conductivity of Stressed GaN Nanofilms

Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties

Effects Of Surface Stress On The Phonon Properties In Gan Nanofilms

Phonon Properties and Thermal Conductivity of GaN Nanofilm under Prestress and Surface/interface Stress

Study of residual stress in reactively sputtered epitaxial Si-doped GaN films

Strain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates

Stress Study of GaN Grown on Serpentine-Channels Masked Si(111) Substrate by MOCVD

The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Interfacial stress characterization of GaN epitaxial layer with sapphire substrate by confocal Raman spectroscopy

Direct van der Waals epitaxy of stress-free GaN films on PECVD grown graphene

Strain Effects on InxAl1−xN Crystalline Quality Grown on GaN Templates by Metalorganic Chemical Vapor Deposition

Strain Effect on Optical Polarization Properties of a ‐plane GaN on R ‐plane Sapphire

Effect of Stress on the Al Composition Evolution in AlGaN Grown Using Metal Organic Vapor Phase Epitaxy

Temperature Dependence of Stress and Optical Properties in AlN Films Grown by MOCVD

Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1-xN and AlN buffer layers grown on Si (111)

Occurrence of Cubic Gan and Strain Relaxation in Gan Buffer Layers Grown by Low-Pressure Metalorganic Vapor Phase Epitaxy on (0001) Sapphire Substrates