Abstract:As well-known,heteroepitaxial growth on sapphire is mainly employed to obtain optoelectronic(devices) because there is no suitable substrate matching with GaN.Therefore,the GaN layer suffers from a stress due to large difference in lattice constants and thermal expansion coefficients between the GaN and sapphire.To improve the quality of devices,the epitaxial lateral overgrowth(ELO) technique is applied to GaN.ELO-GaN on patterned SiO_2/GaN/α-Al_2O_3 substrate is grown by metalorganic chemical vapor deposition(MOCVD).First,a high quality 3 μm thick layer of GaN is grown by MOCVD.Next,standard deposition and photolithographic techniques are employed to prepare a set of parallel SiO_2 stripes oriented along a(〈11-00〉) GaN crystal direction separated by window areas which expose the underlying GaN.A second deposition of GaN onto this patterned substrate is then initiated.During the initial GaN growth,the SiO_2 stripes function as nonwettable surfaces and no GaN deposition occurs on them.However,once the GaN film growth from the window stripes reaches the tops of the SiO_2 stripes,epitaxial lateral overgrowth of GaN commences.The GaN thickness of the second step growth is about 10 μm.The results of a systematic study of the ELO-GaN on sapphire are reported.Atomic force microscopy(AFM) images showed that the surface of ELO-GaN is smooth and that there are linear-configuration hillocks in the middle of mask region,which are caused by the misorientation of crystalline when the ELO-GaN coalesce above the masks.The X-ray diffraction(XRD) curve revealed that the tilts in the(〈11-20〉) direction between GaN in window regions and mask regions are about 1.2°.Raman scattering spectrum revealed that the stress in the mask region is smaller than that in the window region and also the quality of GaN is much higher in the mask region.As a result,the quality of GaN crystalloid is effectively improved by MOCVD using the ELO technique.

Stress Study of GaN Grown on Serpentine-Channels Masked Si(111) Substrate by MOCVD

The Testing of Stress-Sensitivity in Heteroepitaxy GaN/Si by Raman Spectroscopy

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

Stress state of GaN epilayer grown on sapphire and 6H-SiC substrates

Structural Characterization of Epitaxial Lateral Overgrowth GaN by MOCVD

Stress and Morphology of a Nonpolara-Plane GaN Layer Onr-Plane Sapphire Substrate

Microstructural and spectroscopic analysis of epitaxial lateral overgrowth GaN via the self-decomposing hexagonal graphene mask

Epitaxial Lateral Overgrowth of High Quality GaN by MOCVD

Stress Reduction in GaN Films on (111) Silicon-on-insulator Substrate Grown by Metal–organic Chemical Vapor Deposition

GaN Epitaxial Layers Grown on Multilayer Graphene by MOCVD

The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE

Stress and Its Effect on Optical Properties of GaN Epilayers Grown on Si(111), 6H-Sic(0001), and C-Plane Sapphire

Study of Epitaxial Lateral Overgrowth GaN by MOCVD

Optical Properties Evolution of GaN Film Grown Via Lateral Epitaxial Overgrowth

Direct van der Waals epitaxy of stress-free GaN films on PECVD grown graphene

Strain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates

Spatially Resolved and Orientation Dependent Raman Mapping of Epitaxial Lateral Overgrowth Nonpolar A-Plane GaN on R-Plane Sapphire.

Morphology Evolution of MOCVD Grown GaN Epitaxial Layers on Nanopss

Interfacial stress characterization of GaN epitaxial layer with sapphire substrate by confocal Raman spectroscopy

Investigation of GaN layer grown on Si(1 1 1) substrate using an ultrathin AlN wetting layer