Abstract:GaN on Si plays an important role in the integration and promotion of GaN-based wide-gap materials with Si-based integrated circuits (IC) technology. A series of GaN film materials were grown on Si (111) substrate using a unique plasma assistant molecular beam epitaxy (PA-MBE) technology and investigated using multiple characterization techniques of Nomarski microscopy (NM), high-resolution X-ray diffraction (HR-XRD), variable angular spectroscopic ellipsometry (VASE), Raman scattering, photoluminescence (PL), and synchrotron radiation (SR) near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. NM confirmed crack-free wurtzite (w-) GaN thin films in a large range of 180–1500 nm. XRD identified the w- single crystalline structure for these GaN films with the orientation along the c-axis in the normal growth direction. An optimized 700 °C growth temperature, plus other corresponding parameters, was obtained for the PA-MBE growth of GaN on Si, exhibiting strong PL emission, narrow/strong Raman phonon modes, XRD w-GaN peaks, and high crystalline perfection. VASE studies identified this set of MBE-grown GaN/Si as having very low Urbach energy of about 18 meV. UV (325 nm)-excited Raman spectra of GaN/Si samples exhibited the GaN E2(low) and E2(high) phonon modes clearly without Raman features from the Si substrate, overcoming the difficulties from visible (532 nm) Raman measurements with strong Si Raman features overwhelming the GaN signals. The combined UV excitation Raman–PL spectra revealed multiple LO phonons spread over the GaN fundamental band edge emission PL band due to the outgoing resonance effect. Calculation of the UV Raman spectra determined the carrier concentrations with excellent values. Angular-dependent NEXAFS on Ga K-edge revealed the significant anisotropy of the conduction band of w-GaN and identified the NEXAFS resonances corresponding to different final states in the hexagonal GaN films on Si. Comparative GaN material properties are investigated in depth.

Interfacial stress characterization of GaN epitaxial layer with sapphire substrate by confocal Raman spectroscopy

Effects of Surface/interface Stress on Phonon Properties and Thermal Conductivity in AlN/GaN/AlN Heterostructural Nanofilms

Influence of Surface/interface Stress on Thermal Conductivity of Stressed GaN Nanofilms

The Testing of Stress-Sensitivity in Heteroepitaxy GaN/Si by Raman Spectroscopy

Phonon Properties and Thermal Conductivity of GaN Nanofilm under Prestress and Surface/interface Stress

Thermal Stress Analysis and Structural Design of AlxGa1−xN/GaN Epilayers Based on Si Substrate

Stress and Its Effect on Optical Properties of GaN Epilayers Grown on Si(111), 6H-Sic(0001), and C-Plane Sapphire

Stress Study of GaN Grown on Serpentine-Channels Masked Si(111) Substrate by MOCVD

Direct van der Waals epitaxy of stress-free GaN films on PECVD grown graphene

Residual stress characterization of GaN microstructures using bent-beam strain sensors

Interlayer Investigations of GaN Heterostructures Integrated into Silicon Substrates by Surface Activated Bonding

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Structural Properties of GaN(0001) Epitaxial Layers Revealed by High Resolution X-ray Diffraction

Fabrication of low stress GaN-on-diamond structure via dual-sided diamond film deposition

Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties

Tuning the interlayer microstructure and residual stress of buffer-free direct bonding GaN/Si heterostructures

The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE

Decomposition of the anisotropic strain in 3D-structure GaN layers using Raman spectroscopy