Abstract:Si-doped GaN films were grown epitaxially on c-sapphire by rf magnetron reactive co-sputtering of GaAs and Si at various partial pressures of N2 in Ar–N2 growth atmosphere. Energy dispersive x-ray spectroscopy revealed ∼2 at.% Si in all the films, but the N/Ga ratio decreased substantially as N2 percentage was reduced from 100% to 10%. The lattice parameters (a and c) were obtained independently to determine the in-plane and out-of-plane components of strain in films, which were analyzed to deduce the hydrostatic and biaxial strain contributions. High resolution x-ray diffraction revealed the dominant presence of edge dislocations (∼1012 cm−2) in the films grown at 30%–100% N2, which decreases and becomes comparable to the density of screw dislocations (∼1011 cm−2) at lower N2 percentages. The films grown at 75%–100% N2 displayed compressive biaxial stress along with large hydrostatic strain and micro-strain due to the incorporation of nitrogen at interstitial locations and grain boundaries. Both hydrostatic strain and micro-strain decrease in the films grown below 75% N2, in which, a reversal of biaxial stress to tensile is seen due to the prevalence of in-plane tensile stress generated during coalescence. The decrease of tensile stress in films grown below 30% N2, accompanied by increase in micro-strain and hydrostatic strain are ascribed to Ar incorporation and voided morphology. The presence of Si does not have a significant influence on residual stress of films and appears to be masked by the dominant growth-related intrinsic effects.

Residual stress characterization of GaN microstructures using bent-beam strain sensors

The Testing of Stress-Sensitivity in Heteroepitaxy GaN/Si by Raman Spectroscopy

Thermal Stress Analysis and Structural Design of AlxGa1−xN/GaN Epilayers Based on Si Substrate

Effects of Surface/interface Stress on Phonon Properties and Thermal Conductivity in AlN/GaN/AlN Heterostructural Nanofilms

Effect of Stress-Dependent Thermal Conductivity on Thermo-Mechanical Coupling Behavior in GaN-Based Nanofilm under Pulse Heat Source

Influence of Surface/interface Stress on Thermal Conductivity of Stressed GaN Nanofilms

Phonon Properties and Thermal Conductivity of GaN Nanofilm under Prestress and Surface/interface Stress

Interlayer Investigations of GaN Heterostructures Integrated into Silicon Substrates by Surface Activated Bonding

Interfacial stress characterization of GaN epitaxial layer with sapphire substrate by confocal Raman spectroscopy

Strain engineering and strain measurement by spring tethers on suspended epitaxial GaN-on-Si photonic crystal devices

The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE

Characterization of AlGaN/GaN cantilevers fabricated with deep-release techniques

Study of residual stress in reactively sputtered epitaxial Si-doped GaN films

Stress and Its Effect on Optical Properties of GaN Epilayers Grown on Si(111), 6H-Sic(0001), and C-Plane Sapphire

Measurement of Piezoresistance Coefficient Based on GaN HEMT Micro-Accelerometers

Stress Study of GaN Grown on Serpentine-Channels Masked Si(111) Substrate by MOCVD

Micro-Raman for Local Strain Evaluation of GaN LEDs and Si Chips Assembled on Cu Substrates

Residual Stress Measurement in Thin Films Using a Slitting Method with Geometric Phase Analysis under a Dual Beam (FIB/SEM) System

Residual Stress in AlN Films Grown on Sapphire Substrates by Molecular Beam Epitaxy

GaN on Patterned Silicon (GPS) Technique for GaN-based Integrated Microsensors

Piezotronic effect in AlGaN/AlN/GaN heterojunction nanowires used as a flexible strain sensor