Abstract:The amount of residual stress generated during the growth process of aluminum nitride (AlN) thin films prepared by pulsed DC reactive magnetron sputtering was investigated. The evaluated process parameters were pulsed DC frequency, DC power and flow gas ratio. AlN film may crack or peel from the substrate due to significant film residual stress. Therefore, the control of residual stress in films is very important for the synthesis of mechanically stable AlN films. A correlation between the residual stress and the crystal orientation of the films was studied. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), transmission electron microscope (TEM) and scanning electron microscopy (SEM) were used to measure the residual stress, crystal structure and thickness in AlN films. The results show that AlN film has a different structure and stress characteristic under different deposition conditions. The film residual stress correlates well with the film thickness. Besides, in situ optical emission spectroscopy (OES) big data were analyzed using principal component analysis (PCA) in this study. The PC1-DEV (standard deviation in the first principal component direction) was used to calculate the value residual stress (VRS) to accurately predict and classify the stress state of the deposited film, i.e., compression stress or tensile stress. The Box–Behnken experimental design was applied, a mathematical design of experiment (DOE) model was established based on the response surface method (RSM), and the optimum conditions for generating the minimum residual stress were determined.

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Residual Stress of AlN Films RF Sputter Deposited on Si(111) Substrate

Stress Evolution in AlN Growth on Nano-Patterned Sapphire Substrates

Temperature Dependence of Stress and Optical Properties in AlN Films Grown by MOCVD

Residual stress classification of pulsed DC reactive sputtered aluminum nitride film via large-scale data analysis of optical emission spectroscopy

Influence of sputtering parameters on structures and residual stress of AlN films deposited by DC reactive magnetron sputtering at room temperature

Growth and Defects of AlN Epilayers by RF Molecular Beam Epitaxy

Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties

Effect of the N/Al Ratio of AlN Buffer on the Crystal Properties and Stress State of GaN Film Grown on Si(111) Substrate

Minimizing residual stress of aluminum nitride (AlN) thin films using multi-step deposition of DC pulsed sputtering

Effect of stress control by growth adjustment on the edge thread dislocation density of AlN grown on the sapphire

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Strain Effects on InxAl1−xN Crystalline Quality Grown on GaN Templates by Metalorganic Chemical Vapor Deposition

Plasma Assisted Molecular Beam Epitaxy Growth Mechanism of AlGaN Epilayers and Strain Relaxation on AlN Templates

Influence of growth temperature on intrinsic stress distribution in aluminum nitride grown by hydride vapor phase epitaxy

Study of residual stress in reactively sputtered epitaxial Si-doped GaN films

Impact of Temperature and Substrate Type on the Optical and Structural Properties of AlN Epilayers: A Cross-Sectional Analysis Using Advanced Characterization Techniques

Effect of Stress on the Al Composition Evolution in AlGaN Grown Using Metal Organic Vapor Phase Epitaxy

Optical and Structural Investigation of AlN Grown on Sapphire with Reactive MBE Using RF Nitrogen or Ammonia

Improvement of AlN Film Quality by Controlling the Coalescence of Nucleation Islands in Plasma-Assisted Molecular Beam Epitaxy

Stress and Its Effect on Optical Properties of GaN Epilayers Grown on Si(111), 6H-Sic(0001), and C-Plane Sapphire