Abstract:GaN thin film with AlN nucleation layer was grown on Si(lll) substrates using metal-organic chemical vapor deposition(MOCVD).High resolution X-ray diffraction(XRD),ellipsometer and atomic force microscope(AFM) are used to investigate the effect of AlN thickness on GaN film.The results demonstrate that the thickness of low temperature AlN nucleation layer prominently influences the morphology of AlN nucleation layers,the crystal quality and stress of GaN epilayers.It is found that the surface roughness of AlN samples is larger with thicker AlN nucleation layer.θ—2θscan of(0002) shows that the compressive strAlN exists on all GaN samples in c-axis direction and reduces slightly with the increasing of AlN thickness,w scan shows that FWHM of(0002) increases while FWHM of(10-12) decreases with the increasing of AlN thickness.FWHM of(10-12) is related with the density of edge-type threading dislocation(ETD).It means that ETD reduces with the AlN thickness increasing.The change in dislocation density is attributed to the different grAlN sizes and grAlN densities on AlN nucleation layers. The crystal quality of GaN epilayer deposited on AlN nucleation layer with large grAlN size and low grAlN density is good,since the lateral growth and coalescence of GaN islands are promoted.On the other hand,the AlN nucleation layer with small grAlN size and high grAlN density leads to formation of dislocations. These dislocations degrade the crystal quality of GaN.

Improvement of AlN Film Quality by Controlling the Coalescence of Nucleation Islands in Plasma-Assisted Molecular Beam Epitaxy

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

Effects of Aln Nucleation Layer Thickness on Crystal Quality of Aln Grown by Plasma-Assisted Molecular Beam Epitaxy

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Growth and Defects of AlN Epilayers by RF Molecular Beam Epitaxy

Influence of the Nucleation Layer Morphology on the Structural Property of AlN Films Grown on C-Plane Sapphire by MOCVD

Epitaxial Growth of AlN Films on Sapphire Via a Multilayer Structure Adopting a Low- and High-Temperature Alternation Technique

Three-step Growth of AlN Films on Sapphire Substrates by Metal Nitride Vapor Phase Epitaxy

Homoepitaxy Growth of High‐Quality AlN Film on MOCVD AlN Template by Hydride Vapor Phase Epitaxy

Controlled exfoliation of wafer-scale single-crystalline AlN film on MOCVD-grown layered h-BN

Reduction of threading dislocation density for AlN epilayer via a highly compressive-stressed buffer layer

Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy

Strain management and AlN crystal quality improvement with an alternating V/III ratio AlN superlattice

High-quality AlN Epitaxy on Nano-Patterned Sapphire Substrates Prepared by Nano-Imprint Lithography

Epitaxial Growth of High Quality AlN Films on Metallic Aluminum Substrates

Effect of AlN nucleation layer thickness on the quality of GaN grown on Si(111)

EPITAXIAL GROWTH OF AlN AND NbN FILMS ON (111) MgO SUBSTRATE

MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation

Nucleation Mechanism for Epitaxial Growth of Aluminum Films on Sapphire Substrates by Molecular Beam Epitaxy

High Quality AlN Epilayers Grown on Nitrided Sapphire by Metal Organic Chemical Vapor Deposition

Polarity Control and Crystalline Quality Improvement of AlN Thin Films Grown on Si(111) Substrates by Molecular Beam Epitaxy