4-inch 11 μm high-quality AlN thick films grown on nanopatterned sapphire substrates
Jing-Jing Chen,Shiping Guo,Guobin Wang,Jianxi Xu,Yu Xu,Yuning Wang,Ke Xu,Bing Cao,Lei Yao,liang wang
DOI: https://doi.org/10.35848/1347-4065/ad85b9
IF: 1.5
2024-10-10
Japanese Journal of Applied Physics
Abstract:A high-quality AlN thick film with 11 µm thickness and low defect density was grown on a 4-inch hexagonal hole nano-patterned sapphire substrate (NPSS) by metal oxide chemical vapor deposition (MOCVD). The density of dislocation etch pits in the AlN heteroepitaxial film reached 1.1×107 cm-2. The surface and microstrcutres of the AlN thick film were characterized in detail. The dislocation evolution mechanism and stress evolution of AlN were investigated. Dislocations were mainly generated at the interface between the sapphire and AlN, and the voids above the patterned region were generated by the undesirable grain boundaries caused by the lateral epitaxy of AlN and the substrate during the growth process, which prompted a large number of screw dislocations to bend and merge, and while some mixed dislocations to merge and extend upwards, resulting in a high-quality AlN thick film.
Physics,Engineering,Materials Science
What problem does this paper attempt to address?