Abstract:Recently, there have been increasing demands for high-quality AlN/sapphire templates due to their applications in deep ultraviolet light-emitting diodes (DUV LEDs). To acquire a low threading dislocation density (TDD), AlN films are usually thickened to promote dislocation interaction. However, micro cracks are easily generated when their thicknesses exceed 2-3 mu m, severely deteriorating device performances. In this study, we successfully fabricated a 5.6 mu m-thick crack-free AlN film by employing a medium-temperature (MT) interlayer. It is revealed that high-density (1.7 x 10(10)cm(-2)) nano-voids were self-organized above the MT interlayer, which effectively destroyed the coherence between the MT interlayer and the subsequent epilayer by reducing contact area. As a result, tensile stress in the AlN film during growth was significantly decreased to 0.18 GPa, demonstrating a 64% reduction compared with its counterpart without nano-voids. In addition, the thick AlN film with embeded nano-voids allowed dislocations to climb long distances for mutual annihilation, so the TDD of the AlN film was significantly decreased to an extremely low value of 4.7 x 10(7)cm(-2). This technique paves the way for achieving high-performance DUV LEDs and other optoelectronic/electronic devices.

Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy

Fabrication of Crack-Free Aln Film on Sapphire by Hydride Vapor Phase Epitaxy Using an in Situ Etching Method

4-inch 11 μm high-quality AlN thick films grown on nanopatterned sapphire substrates

Preparation of high-quality thick AlN layer on nanopatterned sapphire substrates with sputter-deposited annealed AlN film by hydride vapor-phase epitaxy

Structural and Stress Properties of AlGaN Epilayers Grown on AlN-Nanopatterned Sapphire Templates by Hydride Vapor Phase Epitaxy

Influence of Thickness on Strain State and Surface Morphology of Aln Grown by Hvpe

Study of Defects and Nano-patterned Substrate Regulation Mechanism in AlN Epilayers

Fast growth of crack-free thick AlN film on sputtered AlN/sapphire by introducing high-density nano-voids

High Quality 10.6 Mu M Ain Grown On Pyramidal Patterned Sapphire Substrate By Mocvd

Micro- and Nanostructure Analysis of Vapor-Phase-Grown AlN on Face-to-Face Annealed Sputtered AlN/Nanopatterned Sapphire Substrate Templates

High-quality AlN Epitaxy on Nano-Patterned Sapphire Substrates Prepared by Nano-Imprint Lithography

High quality 10.6 <i>μ</i>m AlN grown on pyramidal patterned sapphire substrate by MOCVD

Lateral Epitaxial Overgrowth Of (0001) Aln On Patterned Sapphire Using Hydride Vapor Phase Epitaxy

Growth of high-quality AlN films on sapphire substrate by introducing voids through growth-mode modification

Microstructure and Influence of Buffer Layer on Threading Dislocations in (0001) AlN/sapphire Grown by Hydride Vapor Phase Epitaxy

Influence of sapphire substrate miscut on the surface morphology and microstructure of AlN films grown by HVPE

Homoepitaxy Growth of High‐Quality AlN Film on MOCVD AlN Template by Hydride Vapor Phase Epitaxy

Atomic Plane Misorientation Assisted Crystalline Quality Improvement in Epitaxial Growth of AlN on a Nanopatterned Sapphire (0001) Surface for Deep Ultraviolet Photoelectric Devices

Defect structure of high temperature hydride vapor phase epitaxy–grown epitaxial (0 0 0 1) AlN/sapphire using growth mode modification process

AlN Thin Film Grown on Different Substrates by Hydride Vapor Phase Epitaxy

Effect of a Lateral Overgrowth Process on the Strain Evolution of AlN Films Grown on a Nanopatterned Sapphire Substrate for Ultraviolet‐C Light‐Emitting Diode Applications