Abstract:AlN materials are widely used in optoelectronic, power electronic, and radio frequency applications. However, the significant lattice and thermal mismatch between heteroepitaxial AlN and its substrate leads to a high threading dislocations (TDs) density, which degrades the performance of device. In this work，we introduces a novel, cost-effective, and stable approach for the epitaxial growth of AlN. We injects different doses of nitrogen ions into nano patterned sapphire substrates, followed by the deposition of an AlN layer using metal-organic chemical vapor deposition. Ultraviolet light-emitting diodes (UV-LEDs) with a luminescence wavelength of 395 nm were fabricated on it, and the optoelectronic properties were evaluated. Compared with the sample prepared by traditional method, the screw TDs density of the sample injected with N ions at a dose of 1×1013 cm-2 decreased by 82%, while having the lowest roughness and a 52% increase in photoluminescence intensity. It can be seen that appropriate doses of N ion implantation can promote the lateral growth and merging process in AlN heteroepitaxy. This is due to the process of implantation of N ions can suppress the tilt and twist of the nucleation islands, effectively reducing the density of TDs in AlN. Furthermore, in comparison to the control LED, the light output power and wall plug efficiency of the LED prepared on the high quality AlN template increased by 63.8% and 61.7%, respectively. The observed enhancement in device performance is attributed to the decreased TDs density of the epitaxial layer, which effectively reduces the nonradiative recombination centers. In summary, this study suggests that ion implantation can significantly improve the quality of epitaxial AlN, thereby facilitating the development of high-performance AlN-based UV-LEDs.

Effect of a Lateral Overgrowth Process on the Strain Evolution of AlN Films Grown on a Nanopatterned Sapphire Substrate for Ultraviolet‐C Light‐Emitting Diode Applications

Improving AlN Crystal Quality and Strain Management on Nanopatterned Sapphire Substrates by High‐Temperature Annealing for UVC Light‐Emitting Diodes

Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Graphene-driving Strain Engineering to Enable Strain-Free Epitaxy of AlN Film for Deep Ultraviolet Light-Emitting Diode

Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy

Influence of the Aln Interlayer Crystal Quality on the Strain Evolution of Gan Layer Grown on Si (111)

Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate

Strain Effect on the Optical Polarization Properties of C-Plane Al_026Ga_074N/GaN Superlattices

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

Different Strain Relief Behaviors in Al0.35ga0.65n/Gan Multiple Quantum Wells on Gan/Sapphire Templates with Aln/Gan Supperlattices and Low-Temperature Aln Interlayers

High-Quality AlN for UV-LEDs Fabricated Via Ion Implantation

Quasi-van der Waals Epitaxy of a Stress-Released AlN Film on Thermally Annealed Hexagonal BN for Deep Ultraviolet Light-Emitting Diodes.

Anisotropic Optical Polarization Dependence on Internal Strain in AlGaN Epilayer Grown on AlxGa1−xN Templates

Role of Strain-Induced Microscale Compositional Pulling on Optical Properties of High Al Content AlGaN Quantum Wells for Deep-Ultraviolet LED.

Atomic Plane Misorientation Assisted Crystalline Quality Improvement in Epitaxial Growth of AlN on a Nanopatterned Sapphire (0001) Surface for Deep Ultraviolet Photoelectric Devices

Strain management and AlN crystal quality improvement with an alternating V/III ratio AlN superlattice

Effects of AlN interlayer on growth of GaN-based LED on patterned silicon substrate

AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency

Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS2

High quality AlN film assisted by graphene/sputtered AlN buffer layer for deep-ultraviolet-LED

Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS₂.