Abstract:Ultrawide bandgap (UWBG) semiconductor materials, with bandgaps far wider than the 3.4 eV of GaN, have attracted great attention recently. As a typical representative, wurtzite aluminum nitride (AlN) material has many advantages including high electron mobility, high breakdown voltage, high piezoelectric coefficient, high thermal conductivity, high hardness, high corrosion resistance, high chemical and thermal stability, high bulk acoustic wave velocity, prominent second-order optical nonlinearity, as well as excellent UV transparency. Therefore, it has wide application prospects in next-generation power electronic devices, energy-harvesting devices, acoustic devices, optical frequency comb, light-emitting diodes, photodetectors, and laser diodes. Due to the lack of low-cost, large-size, and high-ultraviolet-transparency native AlN substrate, however, heteroepitaxial AlN film grown on sapphire substrate is usually adopted to fabricate various devices. To realize high-performance AlN-based devices, we must first know how to obtain high-crystalline-quality and controllable AlN/sapphire templates. This review systematically summarizes the recent advances in fabricating wurtzite AlN film on (0001)-plane sapphire substrate. First, we discuss the control principles of AlN polarity, which greatly affects the surface morphology and crystalline quality of AlN, as well as the electronic and optoelectronic properties of AlN-based devices. Then, we introduce how to control threading dislocations and strain. The physical thoughts of some inspirational growth techniques are discussed in detail, and the threading dislocation density (TDD) values of AlN/sapphire grown by various growth techniques are compiled. We also introduce how to achieve high thermal conductivities in AlN films, which are comparable with those in bulk AlN. Finally, we summarize the future challenge of AlN films acting as templates and semiconductors. Due to the fast development of growth techniques and equipment, as well as the superior material properties, AlN will have wider industrial applications in the future.

Improving AlN Crystal Quality and Strain Management on Nanopatterned Sapphire Substrates by High‐Temperature Annealing for UVC Light‐Emitting Diodes

Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes

Effect of a Lateral Overgrowth Process on the Strain Evolution of AlN Films Grown on a Nanopatterned Sapphire Substrate for Ultraviolet‐C Light‐Emitting Diode Applications

High‐Temperature Annealing and Patterned AlN/Sapphire Interfaces

AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency

282-Nm Algan-Based Deep Ultraviolet Light-Emitting Diodes with Improved Performance on Nano-Patterned Sapphire Substrates

Fast growth of crack-free thick AlN film on sputtered AlN/sapphire by introducing high-density nano-voids

Recent Advances in Fabricating Wurtzite AlN Film on (0001)-Plane Sapphire Substrate

Preparation of high-quality thick AlN layer on nanopatterned sapphire substrates with sputter-deposited annealed AlN film by hydride vapor-phase epitaxy

The Sapphire Substrate Pretreatment Effects on High-Temperature Annealed AlN Templates in Deep Ultraviolet Light Emitting Diodes

Efficiency improvement analysis of nano-patterned sapphire substrates and semi-transparent superlattice contact layer in UVC light-emitting diodes

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

High-quality AlN Epitaxy on Nano-Patterned Sapphire Substrates Prepared by Nano-Imprint Lithography

Atomic Plane Misorientation Assisted Crystalline Quality Improvement in Epitaxial Growth of AlN on a Nanopatterned Sapphire (0001) Surface for Deep Ultraviolet Photoelectric Devices

Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy

Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS2

Study of Defects and Nano-patterned Substrate Regulation Mechanism in AlN Epilayers

Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS₂.

Period Size Effect Induced Crystalline Quality Improvement of AlN on a Nano-Patterned Sapphire Substrate