Abstract:Owing to the lack of large-diameter and affordable AlN bulk crystals, high-quality AlN films grown on sapphire substrates have been intensively analyzed for the potential applications in optoelectronic and electronic devices. Herein, we successfully fabricated low-defect-density AlN thin films on large-offcut-angle sapphire substrates combining magnetron sputtering and metal–organic chemical vapor deposition. It is found that the crystalline qualities of AlN films strongly depend on the densities and geometric features of atomic steps. When high-density zigzag macrosteps are formed on the surface, they can induce dislocation inclination toward multiple directions rather than a single one. In this situation, the inclined dislocations can interact with not only vertical dislocations but also other inclined dislocations. Profiting from the large inclination angles (30–78°), the lateral interaction range of dislocations exhibits a 6-fold increase at most, leading to more frequent dislocation interactions within a relatively thin layer. As a result, the threading dislocation density value of 1 μm thick AlN is reduced down to 1.4 × 10<sup>9</sup> cm<sup>–2</sup>, demonstrating an 80% decrease in comparison with its counterpart without the macrostep-induced dislocation redirection effect. This approach is expected to boost the development of low-cost and high-performance devices on AlN/sapphire templates.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.cgd.1c00170?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.cgd.1c00170</a>.Characterization of surface morphologies in large areas using OM, SEM, and AFM and uniformity of crystalline quality within the 2 in. wafer demonstrated by the HRXRD measurement at five different locations (<a class="ext-link" href="/doi/suppl/10.1021/acs.cgd.1c00170/suppl_file/cg1c00170_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Fast growth of crack-free thick AlN film on sputtered AlN/sapphire by introducing high-density nano-voids

Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy

Low-Defect-Density Aluminum Nitride (AlN) Thin Films Realized by Zigzag Macrostep-Induced Dislocation Redirection

Reduced dislocation density and residual tension in AlN grown on SiC by metalorganic chemical vapor deposition

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

High quality AlN film assisted by graphene/sputtered AlN buffer layer for deep-ultraviolet-LED

Four-inch High Quality Crack-Free AlN Layer Grown on a High-Temperature Annealed AlN Template by MOCVD

High-Quality AlN Film Grown on Sputtered AlN/Sapphire Via Growth-Mode Modification

Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS2

Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS₂.

4-inch 11 μm high-quality AlN thick films grown on nanopatterned sapphire substrates

High-quality AlN Epitaxy on Nano-Patterned Sapphire Substrates Prepared by Nano-Imprint Lithography

Improved Epitaxy of AlN Film for Deep‐Ultraviolet Light‐Emitting Diodes Enabled by Graphene

Improving AlN Crystal Quality and Strain Management on Nanopatterned Sapphire Substrates by High‐Temperature Annealing for UVC Light‐Emitting Diodes

Study of Defects and Nano-patterned Substrate Regulation Mechanism in AlN Epilayers

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate

Quasi-van der Waals Epitaxy of a Stress-Released AlN Film on Thermally Annealed Hexagonal BN for Deep Ultraviolet Light-Emitting Diodes.

Crack-free > 1- μ m AlN layer on Si substrate using ductile interlayer for strain modification in epitaxial film