Abstract:AlN materials are widely used in optoelectronic, power electronic, and radio frequency applications. However, the significant lattice and thermal mismatch between heteroepitaxial AlN and its substrate leads to a high threading dislocations (TDs) density, which degrades the performance of device. In this work，we introduces a novel, cost-effective, and stable approach for the epitaxial growth of AlN. We injects different doses of nitrogen ions into nano patterned sapphire substrates, followed by the deposition of an AlN layer using metal-organic chemical vapor deposition. Ultraviolet light-emitting diodes (UV-LEDs) with a luminescence wavelength of 395 nm were fabricated on it, and the optoelectronic properties were evaluated. Compared with the sample prepared by traditional method, the screw TDs density of the sample injected with N ions at a dose of 1×1013 cm-2 decreased by 82%, while having the lowest roughness and a 52% increase in photoluminescence intensity. It can be seen that appropriate doses of N ion implantation can promote the lateral growth and merging process in AlN heteroepitaxy. This is due to the process of implantation of N ions can suppress the tilt and twist of the nucleation islands, effectively reducing the density of TDs in AlN. Furthermore, in comparison to the control LED, the light output power and wall plug efficiency of the LED prepared on the high quality AlN template increased by 63.8% and 61.7%, respectively. The observed enhancement in device performance is attributed to the decreased TDs density of the epitaxial layer, which effectively reduces the nonradiative recombination centers. In summary, this study suggests that ion implantation can significantly improve the quality of epitaxial AlN, thereby facilitating the development of high-performance AlN-based UV-LEDs.

Improved Epitaxy of AlN Film for Deep‐Ultraviolet Light‐Emitting Diodes Enabled by Graphene

Improved Epitaxy of AlN Film for Deep‐Ultraviolet Light‐Emitting Diodes Enabled by Graphene

High quality AlN film assisted by graphene/sputtered AlN buffer layer for deep-ultraviolet-LED

Quasi‐2D Growth of Aluminum Nitride Film on Graphene for Boosting Deep Ultraviolet Light‐Emitting Diodes

Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

Quasi-van der Waals Epitaxy of a Stress-Released AlN Film on Thermally Annealed Hexagonal BN for Deep Ultraviolet Light-Emitting Diodes.

Transfer-free Graphene-Guided High-Quality Epitaxy of AlN Film for Deep Ultraviolet Light-Emitting Diodes

Graphene-driving Strain Engineering to Enable Strain-Free Epitaxy of AlN Film for Deep Ultraviolet Light-Emitting Diode

Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Graphene-induced crystal-healing of AlN film by thermal annealing for deep ultraviolet light-emitting diodes

Optical properties of AlGaN-based deep-ultraviolet LED grown on graphene/SiC

Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS₂.

Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS2

AlGaN-Based Deep-Ultraviolet Light Emitting Diodes Fabricated on AlN/sapphire Template

Al-Rich III-Nitride Materials and Ultraviolet Light-Emitting Diodes

High-Quality AlN for UV-LEDs Fabricated Via Ion Implantation

Control of Two-Dimensional Growth of AlN and High Al-content AlGaN-based MQWs for Deep-Uv LEDs

New AlN film growth method enhances emission of deep ultraviolet LEDs

Efficient Deep Ultraviolet Emission from Self-Organized AlGaN Quantum Wire Array Grown on Ultrathin Step-bunched AlN Templates

Flexible graphene-assisted van der Waals epitaxy growth of crack-free AlN epilayer on SiC by lattice engineering