Abstract:AlN materials are widely used in optoelectronic, power electronic, and radio frequency applications. However, the significant lattice and thermal mismatch between heteroepitaxial AlN and its substrate leads to a high threading dislocations (TDs) density, which degrades the performance of device. In this work，we introduces a novel, cost-effective, and stable approach for the epitaxial growth of AlN. We injects different doses of nitrogen ions into nano patterned sapphire substrates, followed by the deposition of an AlN layer using metal-organic chemical vapor deposition. Ultraviolet light-emitting diodes (UV-LEDs) with a luminescence wavelength of 395 nm were fabricated on it, and the optoelectronic properties were evaluated. Compared with the sample prepared by traditional method, the screw TDs density of the sample injected with N ions at a dose of 1×1013 cm-2 decreased by 82%, while having the lowest roughness and a 52% increase in photoluminescence intensity. It can be seen that appropriate doses of N ion implantation can promote the lateral growth and merging process in AlN heteroepitaxy. This is due to the process of implantation of N ions can suppress the tilt and twist of the nucleation islands, effectively reducing the density of TDs in AlN. Furthermore, in comparison to the control LED, the light output power and wall plug efficiency of the LED prepared on the high quality AlN template increased by 63.8% and 61.7%, respectively. The observed enhancement in device performance is attributed to the decreased TDs density of the epitaxial layer, which effectively reduces the nonradiative recombination centers. In summary, this study suggests that ion implantation can significantly improve the quality of epitaxial AlN, thereby facilitating the development of high-performance AlN-based UV-LEDs.

Al-Rich III-Nitride Materials and Ultraviolet Light-Emitting Diodes

Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Quasi-van der Waals Epitaxy of a Stress-Released AlN Film on Thermally Annealed Hexagonal BN for Deep Ultraviolet Light-Emitting Diodes.

High quality AlN film assisted by graphene/sputtered AlN buffer layer for deep-ultraviolet-LED

High-Quality AlN for UV-LEDs Fabricated Via Ion Implantation

Development of high Al content structural Ⅲ nitrides and their applications in deep UV-LED

AlGaN-Based Deep-Ultraviolet Light Emitting Diodes Fabricated on AlN/sapphire Template

Improved Epitaxy of AlN Film for Deep‐Ultraviolet Light‐Emitting Diodes Enabled by Graphene

Quasi‐2D Growth of Aluminum Nitride Film on Graphene for Boosting Deep Ultraviolet Light‐Emitting Diodes

III-Nitride Deep UV LED Without Electron Blocking Layer

Iii-Nitride Deep Ultraviolet Micro- and Nano-Photonics

Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate

High-quality AlGaN Layers over Pulsed Atomic-Layer Epitaxially Grown AlN Templates for Deep Ultraviolet Light-Emitting Diodes

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

Control of Two-Dimensional Growth of AlN and High Al-content AlGaN-based MQWs for Deep-Uv LEDs

N‐al 0.75 Ga 0.25 N Epilayers for 250 Nm Emission Ultraviolet Light Emitting Diodes

Graphene-driving Strain Engineering to Enable Strain-Free Epitaxy of AlN Film for Deep Ultraviolet Light-Emitting Diode

Optimization of growth parameters of AlN thin films and investigation of electrical and electroluminescence characteristics from Au/i-AlN/n-GaN UV light-emitting diode

AlGaN-based Thin-Film Ultraviolet Laser Diodes and Light-Emitting Diodes

Optical and Structural Properties of Aluminum Nitride Epi-Films at Room and High Temperature