Abstract:Ultrawide bandgap (UWBG) semiconductor materials, with bandgaps far wider than the 3.4 eV of GaN, have attracted great attention recently. As a typical representative, wurtzite aluminum nitride (AlN) material has many advantages including high electron mobility, high breakdown voltage, high piezoelectric coefficient, high thermal conductivity, high hardness, high corrosion resistance, high chemical and thermal stability, high bulk acoustic wave velocity, prominent second-order optical nonlinearity, as well as excellent UV transparency. Therefore, it has wide application prospects in next-generation power electronic devices, energy-harvesting devices, acoustic devices, optical frequency comb, light-emitting diodes, photodetectors, and laser diodes. Due to the lack of low-cost, large-size, and high-ultraviolet-transparency native AlN substrate, however, heteroepitaxial AlN film grown on sapphire substrate is usually adopted to fabricate various devices. To realize high-performance AlN-based devices, we must first know how to obtain high-crystalline-quality and controllable AlN/sapphire templates. This review systematically summarizes the recent advances in fabricating wurtzite AlN film on (0001)-plane sapphire substrate. First, we discuss the control principles of AlN polarity, which greatly affects the surface morphology and crystalline quality of AlN, as well as the electronic and optoelectronic properties of AlN-based devices. Then, we introduce how to control threading dislocations and strain. The physical thoughts of some inspirational growth techniques are discussed in detail, and the threading dislocation density (TDD) values of AlN/sapphire grown by various growth techniques are compiled. We also introduce how to achieve high thermal conductivities in AlN films, which are comparable with those in bulk AlN. Finally, we summarize the future challenge of AlN films acting as templates and semiconductors. Due to the fast development of growth techniques and equipment, as well as the superior material properties, AlN will have wider industrial applications in the future.

Four-inch High Quality Crack-Free AlN Layer Grown on a High-Temperature Annealed AlN Template by MOCVD

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

Fast growth of crack-free thick AlN film on sputtered AlN/sapphire by introducing high-density nano-voids

Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS₂.

Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS2

High-Quality AlN Grown by a Combination of Substrate Pretreatment and Periodic Growth Mode Control

Drive High Power UVC‐LED Wafer into Low‐Cost 4‐Inch Era: Effect of Strain Modulation

High quality AlN film assisted by graphene/sputtered AlN buffer layer for deep-ultraviolet-LED

Crystal Quality Evolution Of Aln Films Via High-Temperature Annealing Under Ambient N-2 Conditions

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

High Quality AlN Film Grown on a Nano-Concave-circle Patterned Si Substrate with an AlN Seed Layer

2-inch semi-polar (11̄2) AlN templates prepared by high-temperature hydride vapor phase epitaxy

Recent Advances in Fabricating Wurtzite AlN Film on (0001)-Plane Sapphire Substrate

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Graphene-induced crystal-healing of AlN film by thermal annealing for deep ultraviolet light-emitting diodes

Flexible graphene-assisted van der Waals epitaxy growth of crack-free AlN epilayer on SiC by lattice engineering

Improved Epitaxy of AlN Film for Deep‐Ultraviolet Light‐Emitting Diodes Enabled by Graphene

High quality AlN with uniform in-plane strain on nano-patterned AlN templates achieved by preset strain modulation

Homoepitaxial growth of 3-inch single crystalline AlN boules by the physical vapor transport process