High quality AlN with uniform in-plane strain on nano-patterned AlN templates achieved by preset strain modulation

Baiyin Liu,Fujun Xu,Jiaming Wang,Jing Lang,Na Zhang,Xuzhou Fang,Liubing Wang,Xuelin Yang,Xiangning Kang,Xinqiang Wang,Zhixin Qin,Weikun Ge,Bo Shen
DOI: https://doi.org/10.35848/1347-4065/ac3ac4
IF: 1.5
2021-01-01
Japanese Journal of Applied Physics
Abstract:High-quality AlN with uniform in-plane strain has been attempted with preset strain modulation on nano-patterned AlN templates (NPATs). It is found that this strain preset frame can effectively improve both the tilt and twist features of AlN on NPATs, further greatly decreasing threading dislocation density. More importantly, the AlN epilayer after completing coalescence can maintain the in-plane uniform compressive strain. Adopting AlN templates achieved in this scheme, the chip-on-wafer light output power (LOP) of AlGaN light-emitting diode (LED) reaches 10.2 mW at 100 mA with single emission peak at 280 nm, which increases by 22.3% than the LOP of LED device without adopting this strain preset frame.
What problem does this paper attempt to address?