Abstract:Ultrawide bandgap (UWBG) semiconductor materials, with bandgaps far wider than the 3.4 eV of GaN, have attracted great attention recently. As a typical representative, wurtzite aluminum nitride (AlN) material has many advantages including high electron mobility, high breakdown voltage, high piezoelectric coefficient, high thermal conductivity, high hardness, high corrosion resistance, high chemical and thermal stability, high bulk acoustic wave velocity, prominent second-order optical nonlinearity, as well as excellent UV transparency. Therefore, it has wide application prospects in next-generation power electronic devices, energy-harvesting devices, acoustic devices, optical frequency comb, light-emitting diodes, photodetectors, and laser diodes. Due to the lack of low-cost, large-size, and high-ultraviolet-transparency native AlN substrate, however, heteroepitaxial AlN film grown on sapphire substrate is usually adopted to fabricate various devices. To realize high-performance AlN-based devices, we must first know how to obtain high-crystalline-quality and controllable AlN/sapphire templates. This review systematically summarizes the recent advances in fabricating wurtzite AlN film on (0001)-plane sapphire substrate. First, we discuss the control principles of AlN polarity, which greatly affects the surface morphology and crystalline quality of AlN, as well as the electronic and optoelectronic properties of AlN-based devices. Then, we introduce how to control threading dislocations and strain. The physical thoughts of some inspirational growth techniques are discussed in detail, and the threading dislocation density (TDD) values of AlN/sapphire grown by various growth techniques are compiled. We also introduce how to achieve high thermal conductivities in AlN films, which are comparable with those in bulk AlN. Finally, we summarize the future challenge of AlN films acting as templates and semiconductors. Due to the fast development of growth techniques and equipment, as well as the superior material properties, AlN will have wider industrial applications in the future.

High-quality AlN Epitaxy on Sapphire Substrates with Sputtered Buffer Layers

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

High-quality AlN Epitaxy on Nano-Patterned Sapphire Substrates Prepared by Nano-Imprint Lithography

Epitaxial Growth of High-quality AlN Template on Sapphire Substrate by Metal Organic Chemical Vapor Deposition

High Quality AlN Epilayers Grown on Nitrided Sapphire by Metal Organic Chemical Vapor Deposition

Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire

High-Quality AlN Film Grown on Sputtered AlN/Sapphire Via Growth-Mode Modification

Epitaxial Growth of AlN Films on Sapphire Via a Multilayer Structure Adopting a Low- and High-Temperature Alternation Technique

Strain management and AlN crystal quality improvement with an alternating V/III ratio AlN superlattice

Recent Advances in Fabricating Wurtzite AlN Film on (0001)-Plane Sapphire Substrate

Fast Growth of Strain-Free AlN on Graphene-Buffered Sapphire

Period Size Effect Induced Crystalline Quality Improvement of AlN on a Nano-Patterned Sapphire Substrate

Epitaxial Growth of High Quality AlN Films on Si Substrates

Study of Buffer and Epitaxy Technology in Two-Step Growth of Aluminium Nitride

Fast Growth of High Quality AlN Films on Sapphire Using a Dislocation Filtering Layer for Ultraviolet Light-Emitting Diodes

Preparation of high-quality thick AlN layer on nanopatterned sapphire substrates with sputter-deposited annealed AlN film by hydride vapor-phase epitaxy

High Quality 10.6 Mu M Ain Grown On Pyramidal Patterned Sapphire Substrate By Mocvd

4-inch 11 μm high-quality AlN thick films grown on nanopatterned sapphire substrates

Effect of substrate temperature on properties of AlN buffer layer grown by remote plasma ALD

Three-step Growth of AlN Films on Sapphire Substrates by Metal Nitride Vapor Phase Epitaxy

High Quality InAlN/GaN Heterostructures Grown on Sapphire by Pulsed Metal Organic Chemical Vapor Deposition