Abstract:Ultraviolet‐C light‐emitting diodes (UVC‐LEDs) have great application in pathogen inactivation under various kinds of situations, especially in the fight against COVID‐19. Unfortunately, its epitaxial wafers are so far limited to a size of 2 inches, which greatly increases the cost of massive production. In this work, a 4‐inch crack‐free high‐power UVC‐LED wafer is reported. This achievement relies on a proposed strain‐tailored strategy, where a 3D to 2D (3D‐2D) transition layer is introduced during the homo‐epitaxy of AlN on the high temperature annealed (HTA)‐AlN template, which successfully drives the original compressive strain into a tensile one and thus solves the challenge of realizing a high‐quality Al0.6Ga0.4N layer with a flat surface. This smooth Al0.6Ga0.4N layer is nearly pseudomorphically grown on the strain‐tailored HTA‐AlN template, leading to 4‐inch UVC‐LED wafers with outstanding performances. The strategy succeeds in compromising the bottlenecked contradictory in producing a large‐sized UVC‐LED wafer on pronounced crystalline AlN template: The compressive strain in HTA‐AlN allows for a crack‐free 4‐inch wafer, but at the same time leads to a deterioration of the AlGaN morphology and crystal quality. The launch of 4‐inch wafers makes the chip fabrication process of UVC‐LEDs match the mature blue one, and will definitely speed up the universal application of UVC‐LED in daily life. A strain‐tailoring strategy is proposed in AlN epitaxy on a high temperature annealed AlN template and thus the first 4‐inch crack‐free high power UVC‐LED wafer is demonstrated. Such a success pushes UVC‐LEDs into the same 4‐inch area as commercially mature blue LEDs, enabling the possibility of large‐scale epitaxy and chip manufacturing at a significantly reduced cost.

Drive High Power UVC‐LED Wafer into Low‐Cost 4‐Inch Era: Effect of Strain Modulation

Four-inch High Quality Crack-Free AlN Layer Grown on a High-Temperature Annealed AlN Template by MOCVD

Paving the Way for High‐Performance UVB‐LEDs Through Substrate‐Dominated Strain‐Modulation

UVC LEDs on Bulk AlN Substrates Using Silicon Nanomembranes for Efficient Hole Injection

Breaking the Transverse Magnetic-Polarized Light Extraction Bottleneck of Ultraviolet-C Light-Emitting Diodes Using Nanopatterned Substrates and an Inclined Reflector

Effect of a Lateral Overgrowth Process on the Strain Evolution of AlN Films Grown on a Nanopatterned Sapphire Substrate for Ultraviolet‐C Light‐Emitting Diode Applications

High-power AlGaN deep-ultraviolet micro-light-emitting diode displays for maskless photolithography

Efficient Deep Ultraviolet Emission from Self-Organized AlGaN Quantum Wire Array Grown on Ultrathin Step-bunched AlN Templates

Graphene-driving Strain Engineering to Enable Strain-Free Epitaxy of AlN Film for Deep Ultraviolet Light-Emitting Diode

395 Nm GaN-based Near-Ultraviolet Light-Emitting Diodes on Si Substrates with a High Wall-Plug Efficiency of 520%@350 Ma

High-quality AlGaN Epitaxial Structures and Realization of UVC Vertical-Cavity Surface-Emitting Lasers

Fabrication technology for high light-extraction ultraviolet thin-film flip-chip (UV TFFC) LEDs grown on SiC

3.2: Elevating the Light Output Power Density of Scaling‐down AlGaN Ultraviolet‐C Micro‐LED

Quasi-van der Waals Epitaxy of a Stress-Released AlN Film on Thermally Annealed Hexagonal BN for Deep Ultraviolet Light-Emitting Diodes.

Quasi‐2D Growth of Aluminum Nitride Film on Graphene for Boosting Deep Ultraviolet Light‐Emitting Diodes

Wafer-scale Vertical Injection III-nitride Deep-Ultraviolet Light Emitters

Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Efficiency boosting of 236 nm AlGaN-based micro-LEDs

Efficiency improvement analysis of nano-patterned sapphire substrates and semi-transparent superlattice contact layer in UVC light-emitting diodes

High quality AlN film assisted by graphene/sputtered AlN buffer layer for deep-ultraviolet-LED

Low Dislocation Density Homoepitaxy Ultraviolet-A Micro-LEDs Scale Down to 3 μm