Wafer-scale Vertical Injection III-nitride Deep-Ultraviolet Light Emitters

Jiaming Wang,Chen Ji,Jing Lang,Fujun Xu,Lisheng Zhang,Xiangning Kang,Zhixin Qin,Xuelin Yang,Ning Tang,Xinqiang Wang,Weikun Ge,Bo Shen

DOI: https://doi.org/10.1038/s41467-024-53857-3

IF: 16.6

2024-01-01

Nature Communications

Abstract:A ground-breaking roadmap of III-nitride solid-state deep-ultraviolet light emitters is demonstrated to realize the wafer-scale fabrication of devices in vertical injection configuration, from 2 to 4 inches. The epitaxial device structure is stacked on a GaN template instead of conventionally adopted AlN, where the primary concern of the tensile strain for Al-rich AlGaN on GaN is addressed via an innovative decoupling strategy, making the device structure decoupled from the underlying GaN template. Moreover, the strategy provides a protection cushion against the stress mutation during the removal of substrates. As such, large-sized wafers can be obtained without surface cracks, even after the removal of the sapphire substrates by laser lift-off. Wafer-scale fabrication of 280 nm vertical injection deep-ultraviolet light-emitting diodes is eventually demonstrated, where a light output power of 65.2 mW is achieved at a current of 200 mA, largely thanks to the significant improvement of light extraction. This work will definitely speed up the application of III-nitride solid-state deep-ultraviolet light emitters featuring high performance and scalability.