282-Nm Algan-Based Deep Ultraviolet Light-Emitting Diodes with Improved Performance on Nano-Patterned Sapphire Substrates

Peng Dong,Jianchang Yan,Junxi Wang,Yun Zhang,Chong Geng,Tongbo Wei,Peipei Cong,Yiyun Zhang,Jianping Zeng,Yingdong Tian,Lili Sun,Qingfeng Yan,Jinmin Li,Shunfei Fan,Zhixin Qin
DOI: https://doi.org/10.1063/1.4812237
IF: 4
2013-01-01
Applied Physics Letters
Abstract:We first report AlGaN-based deep ultraviolet light-emitting diodes (UV-LEDs) grown on nano-patterned sapphire substrates (NPSS) prepared through a nanosphere lithography technique. The AlN coalescence thickness on NPSS is only 3 μm due to AlN's nano-scaled lateral growth, which also leads to low dislocation densities in AlN and epi-layers above. On NPSS, the light-output power of a 282-nm UV-LED reaches 3.03 mW at 20 mA with external quantum efficiency of 3.45%, exhibiting 98% better performance than that on flat sapphire. Temperature-dependent photoluminescence reveals this significant enhancement to be a combination of higher internal quantum efficiency and higher light extraction efficiency.
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