Abstract:AlGaN-based light-emitting diodes (LEDs) operating in the deep-ultraviolet (DUV) spectral range (210-280 nm) have demonstrated potential applications in physical sterilization. However, the poor external quantum efficiency (EQE) hinders further advances in the emission performance of AlGaN-based DUV LEDs. Here, we demonstrate the performance of 270-nm AlGaN-based DUV LEDs beyond the state-of-the-art by exploiting the innovative combination of bandgap engineering and device craft. By adopting tailored multiple quantum wells (MQWs), a reflective Al reflector, a low-optical-loss tunneling junction (TJ) and a dielectric SiO2 insertion structure (IS-SiO2), outstanding light output powers (LOPs) of 140.1 mW are achieved in our DUV LEDs at 850 mA. The EQEs of our DUV LEDs are 4.5 times greater than those of their conventional counterparts. This comprehensive approach overcomes the major difficulties commonly faced in the pursuit of high-performance AlGaN-based DUV LEDs, such as strong quantum-confined Stark effect (QCSE), severe optical absorption in the p-electrode/ohmic contact layer and poor transverse magnetic (TM)-polarized light extraction. Furthermore, the on-wafer electroluminescence characterization validated the scalability of our DUV LEDs to larger production scales. Our work is promising for the development of highly efficient AlGaN-based DUV LEDs.

AlGaN-based Deep Ultraviolet Micro-Led Emitting at 275 Nm.

240 nm AlGaN-based deep ultraviolet micro-LEDs: size effect versus edge effect

Highly efficient AlGaN-based deep-ultraviolet light-emitting diodes: from bandgap engineering to device craft

150 mW deep-ultraviolet light-emitting diodes with large-area AlN nanophotonic light-extraction structure emitting at 265 nm

275 nm Deep Ultraviolet AlGaN-Based Micro-LED Arrays for Ultraviolet Communication

AlGaN-Based Deep-Ultraviolet Light Emitting Diodes Fabricated on AlN/sapphire Template

Recent Progress on AlGaN Based Deep Ultraviolet Light-Emitting Diodes below 250 nm

Efficient DUV Micro-Led and Arrays for Various Applications

AlGaN-Based Deep Ultraviolet Vertical-Cavity Surface-Emitting Laser

Light extraction efficiency and internal quantum efficiency of fully UVC-transparent AlGaN based LEDs

AlGaN-Based Deep UV Communication LED With Superlattice Electron-Blocking Layer at 274 nm

AlGaN-Based Deep-UV Micro-LED Array for Quantum Dots Converted Display With Ultra-Wide Color Gamut

Efficiency boosting of 236 nm AlGaN-based micro-LEDs

3.2: Elevating the Light Output Power Density of Scaling‐down AlGaN Ultraviolet‐C Micro‐LED

AlGaN Ultraviolet Micro-LEDs

Uv Light-Emitting Diodes at 340 Nm Fabricated on A Bulk Gan Substrate

III-Nitride Deep UV LED Without Electron Blocking Layer

Effect of the self-aligned etching thin p-GaN layer on the performance of AlGaN-based DUV LEDs with various chip sizes

Thermal behavior of AlGaN-based deep-UV LEDs

Iii-Nitride Deep Ultraviolet Micro- and Nano-Photonics

Colloidal etching of deep ultraviolet LED with improved light extraction efficiency