Abstract:Micro light-emitting diode (micro-LED) arrays based on an AlInGaN structure have attracted much interest recently as light sources for data communications. Visible light communication (VLC), over free space or plastic optical fibre (POF), has become a very important technique in the role of data transmission. The micro-LEDs which are reported here contain pixels ranging in diameter from 14 to 84 mu m and can be driven directly using a high speed probe or via complementary metal-oxide semiconductor (CMOS) technology. The CMOS arrays allow for easy, computer control of individual pixels within arrays containing up to 16x16 elements. The micro-LEDs best suited for data transmission have peak emissions of 450nm or 520nm, however various other wavelengths across the visible spectrum can also be used. Optical modulation bandwidths of over 400MHz have been achieved as well as error-free (defined as an error rate of <1x10(-10)) data transmission using on-off keying (OOK) non-return-to-zero (NRZ) modulation at data rates of over 500Mbit/s over free space. Also, as a step towards a more practical multi-emitter data transmitter, the frequency response of a micro-LED integrated with CMOS circuitry was measured and found to be up to 185MHz. Despite the reduction in bandwidth compared to the bare measurements using a high speed probe, a good compromise is achieved from the additional control available to select each pixel. It has been shown that modulating more than one pixel simultaneously can increase the data rate. As work continues in this area, the aim will be to further increase the data transmission rate by modulating more pixels on a single device to transmit multiple parallel data channels simultaneously.

275 nm Deep Ultraviolet AlGaN-Based Micro-LED Arrays for Ultraviolet Communication

AlGaN-based Deep Ultraviolet Micro-Led Emitting at 275 Nm.

AlGaN-Based Deep UV Communication LED With Superlattice Electron-Blocking Layer at 274 nm

AlGaN Ultraviolet Micro-LEDs

Monolithic Dual-Wavelength AlGaN-Based UV-LEDs with Controllable Spectral Profile

Efficient DUV Micro-Led and Arrays for Various Applications

Size-Dependent UV-C Communication Performance of AlGaN Micro-LEDs and LEDs

240 nm AlGaN-based deep ultraviolet micro-LEDs: size effect versus edge effect

High Wall-Plug Efficiency AlGaN Deep Ultraviolet Micro-LEDs Enabled by an Etched Reflective Array Design for High Data Transmission

3.2: Elevating the Light Output Power Density of Scaling‐down AlGaN Ultraviolet‐C Micro‐LED

GaN-based Parallel Micro-Light-emitting Diode Arrays with Dual-Wavelength InxGa1-xN/GaN MQWs for Visible Light Communication

AlGaN-Based Deep-UV Micro-LED Array for Quantum Dots Converted Display With Ultra-Wide Color Gamut

Enhancing the optical and electrical properties of AlGaN ultraviolet-C micro-LED via a hybrid scheme of plasma and chemical treatment

High Speed Gan Micro-Light-Emitting Diode Arrays for Data Communications

Parallel Micro-Led Arrays with a High Modulation Bandwidth for a Visible Light Communication

60‐4: Minimal Efficiency Degradation and Elevated Radiometric Power Density of Ultraviolet‐A Micro‐LED with Homoepitaxial Structure

High-quality AlGaN Epitaxial Structures and Realization of UVC Vertical-Cavity Surface-Emitting Lasers

Full Wafer Scale Electroluminescence Properties of AlGaN-based Deep Ultraviolet LEDs with Different Well Widths.

760 Mbps ultraviolet wireless communication based on a transmitter with AlGaN/InGaN MQWs

395 Nm GaN-based Near-Ultraviolet Light-Emitting Diodes on Si Substrates with a High Wall-Plug Efficiency of 520%@350 Ma

Iii-Nitride Deep Ultraviolet Micro- and Nano-Photonics