Realization of Low Dislocation Density AlN on a Small-Coalescence-area Nano-Patterned Sapphire Substrate

F. J. Xu,L. S. Zhang,N. Xie,M. X. Wang,Y. H. Sun,B. Y. Liu,W. K. Ge,X. Q. Wang,B. Shen

DOI: https://doi.org/10.1039/c8ce01788c

IF: 3.756

2019-01-01

CrystEngComm

Abstract:Growth behaviors of AlN on hexagonal configuration hole-type and truncated-cone-pillar-type nano-patterned sapphire substrates (NPSSs) have been investigated.

What problem does this paper attempt to address?

High-quality AlN Epitaxy on Nano-Patterned Sapphire Substrates Prepared by Nano-Imprint Lithography

Lisheng Zhang,Fujun Xu,Jiaming Wang,Chenguang He,Weiwei Guo,Mingxing Wang,Bowen Sheng,Lin Lu,Zhixin Qin,Xinqiang Wang,Bo Shen

DOI: https://doi.org/10.1038/srep35934

IF: 4.6

2016-01-01

Scientific Reports

Abstract:We report epitaxial growth of AlN films with atomically flat surface on nano-patterned sapphire substrates (NPSS) prepared by nano-imprint lithography. The crystalline quality can be greatly improved by using the optimized 1-μm-period NPSS. The X-ray diffraction ω-scan full width at half maximum values for (0002) and (10 2) reflections are 171 and 205 arcsec, respectively. The optimized NPSS contribute to eliminating almost entirely the threading dislocations (TDs) originating from the AlN/sapphire interface via bending the dislocations by image force from the void sidewalls before coalescence. In addition, reducing the misorientations of the adjacent regions during coalescence adopting the low lateral growth rate is also essential for decreasing TDs in the upper AlN epilayer.
Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

chen changqing,yang li,shengchang chen,wu tian,senlin li,wang hu,zhang jin,wu zhihao,fang yanyan,jiangnan dai

2012-01-01

Abstract:Multi-growth approaches including pulsed atomic layer epitaxy and high temperature continuous growth were used to deposit AlN layers on sapphire. The results show that the crystal quality can be significantly improved by the this technique.
Low-Defect-Density Aluminum Nitride (AlN) Thin Films Realized by Zigzag Macrostep-Induced Dislocation Redirection

Chenguang He,Hualong Wu,Chuanyu Jia,Kang Zhang,Longfei He,Qiao Wang,Junze Li,Ningyang Liu,Shan Zhang,Wei Zhao,Zhitao Chen,Bo Shen

DOI: https://doi.org/10.1021/acs.cgd.1c00170

2021-04-30

Abstract:Owing to the lack of large-diameter and affordable AlN bulk crystals, high-quality AlN films grown on sapphire substrates have been intensively analyzed for the potential applications in optoelectronic and electronic devices. Herein, we successfully fabricated low-defect-density AlN thin films on large-offcut-angle sapphire substrates combining magnetron sputtering and metal–organic chemical vapor deposition. It is found that the crystalline qualities of AlN films strongly depend on the densities and geometric features of atomic steps. When high-density zigzag macrosteps are formed on the surface, they can induce dislocation inclination toward multiple directions rather than a single one. In this situation, the inclined dislocations can interact with not only vertical dislocations but also other inclined dislocations. Profiting from the large inclination angles (30–78°), the lateral interaction range of dislocations exhibits a 6-fold increase at most, leading to more frequent dislocation interactions within a relatively thin layer. As a result, the threading dislocation density value of 1 μm thick AlN is reduced down to 1.4 × 10<sup>9</sup> cm<sup>–2</sup>, demonstrating an 80% decrease in comparison with its counterpart without the macrostep-induced dislocation redirection effect. This approach is expected to boost the development of low-cost and high-performance devices on AlN/sapphire templates.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.cgd.1c00170?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.cgd.1c00170</a>.Characterization of surface morphologies in large areas using OM, SEM, and AFM and uniformity of crystalline quality within the 2 in. wafer demonstrated by the HRXRD measurement at five different locations (<a class="ext-link" href="/doi/suppl/10.1021/acs.cgd.1c00170/suppl_file/cg1c00170_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

chemistry, multidisciplinary,materials science,crystallography
4-inch 11 μm high-quality AlN thick films grown on nanopatterned sapphire substrates

Jing-Jing Chen,Shiping Guo,Guobin Wang,Jianxi Xu,Yu Xu,Yuning Wang,Ke Xu,Bing Cao,Lei Yao,liang wang

DOI: https://doi.org/10.35848/1347-4065/ad85b9

IF: 1.5

2024-10-10

Japanese Journal of Applied Physics

Abstract:A high-quality AlN thick film with 11 µm thickness and low defect density was grown on a 4-inch hexagonal hole nano-patterned sapphire substrate (NPSS) by metal oxide chemical vapor deposition (MOCVD). The density of dislocation etch pits in the AlN heteroepitaxial film reached 1.1×107 cm-2. The surface and microstrcutres of the AlN thick film were characterized in detail. The dislocation evolution mechanism and stress evolution of AlN were investigated. Dislocations were mainly generated at the interface between the sapphire and AlN, and the voids above the patterned region were generated by the undesirable grain boundaries caused by the lateral epitaxy of AlN and the substrate during the growth process, which prompted a large number of screw dislocations to bend and merge, and while some mixed dislocations to merge and extend upwards, resulting in a high-quality AlN thick film.

Physics,Engineering,Materials Science
Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy

Chuang Wang,Xiao-Dong Gao,Di-Di Li,Jing-Jing Chen,Jia-Fan Chen,Xiao-Ming Dong,Xiaodan Wang,Jun Huang,Xiong-Hui Zeng,Ke Xu,Wang Chuang,Xiao-dan Wang

DOI: https://doi.org/10.1088/1674-1056/ac6865

2022-04-20

Chinese Physics B

Abstract:Abstract A crack-free HVPE-AlN thick film with 4.5 μm thickness was grown on a 2-inch hole-type nano-patterned sapphire substrates (NPSSs). The coalescence, stress evolution, and dislocation annihilation mechanisms in the AlN layer have been investigated. The large voids located on the pattern region was caused by the undesirable parasitic crystallites grown on the sidewalls of the nano-pattern in early growth stage. The coalescence of the c-plane AlN was hindered by these three-fold crystallites and the special triangle void appeared. The cross-sectional Raman line scan was used to characterize the change of stress with film thickness, which corresponds to the characteristics of different growth stages of AlN. Threading dislocations (TDs) mainly originate from the boundary between misaligned crystallites and the c-plane AlN and the coalescence of two adjacent c-plane AlN crystals, rather than the interface between sapphire and AlN.

physics, multidisciplinary
Micro- and Nanostructure Analysis of Vapor-Phase-Grown AlN on Face-to-Face Annealed Sputtered AlN/Nanopatterned Sapphire Substrate Templates

Yudai Nakanishi,Yusuke Hayashi,Takeaki Hamachi,Tetsuya Tohei,Yoshikata Nakajima,Shiyu Xiao,Kanako Shojiki,Hideto Miyake,Akira Sakai

DOI: https://doi.org/10.1007/s11664-023-10348-3

IF: 2.1

2023-03-29

Journal of Electronic Materials

Abstract:Micro- and nanostructures in vapor-phase-grown AlN on face-to-face annealed sputtered AlN (FFA Sp-AlN) templates formed on nanopatterned sapphire substrates (NPSS) were comprehensively analyzed using transmission electron microscopy. The comparison between metal–organic vapor-phase epitaxy-grown AlN/FFA Sp-AlN/hole-type NPSS (Sample MOH) and hydride vapor-phase epitaxy-grown AlN/FFA Sp-AlN/cone-type NPSS (Sample HVC) showed apparent differences in the morphology of dislocation propagation, presence of voids, shape of polarity inversion boundaries, and crystal structure on the slope region of NPSS. Notably, cross-sectional and plan-view observations revealed that the quality of FFA Sp-AlN significantly affects the threading dislocation density in the vapor-phase-grown layer. At the slope region of the AlN/NPSS interface, γ-AlON was observed in the MOH sample, while highly misaligned AlN grains were observed in the HVC sample. These characteristic crystal structures affect the occurrence of dislocations via different mechanisms in each sample. This study provides practical information for strategically controlling the micro- and nanostructures formed in AlN/NPSS structures for high-performance AlGaN-based deep-ultraviolet emitters.

engineering, electrical & electronic,materials science, multidisciplinary,physics, applied
High-quality AlN Epitaxy on Sapphire Substrates with Sputtered Buffer Layers

Lisheng Zhang,Fujun Xu,Mingxing Wang,Yuanhao Sun,Nan Xie,Tao Wang,Boyu Dong,Zhixin Qin,Xinqiang Wang,Bo Shen

DOI: https://doi.org/10.1016/j.spmi.2017.03.013

IF: 3.22

2017-01-01

Superlattices and Microstructures

Abstract:In this work, a novel strategy for high-quality AlN templates epitaxy on sapphire substrates with sputtered buffer layers combined with a low- and high-temperature alteration technique is proposed. The best full width at half maximum values for (0002) and (11¯02) reflections are 207 and 377 arcsec, respectively. Investigations indicate the joint effect of growth mode control and sputtered buffer layer results in the improvement of AlN crystalline quality. Firstly, threading dislocations density can be significantly decreased due to the alteration from three-dimensional to two-dimensional growth mode. Moreover, the graded composition of AlON layer in the sputtered buffer layer is believed to alleviate lattice mismatch between sapphire substrates and AlN, which also contributes to low dislocations density in AlN templates.
Low Density of Threading Dislocations in Aln Grown on Sapphire

Nikolai Faleev,Hai Lu,William J. Schaff

DOI: https://doi.org/10.1063/1.2728755

IF: 2.877

2007-01-01

Journal of Applied Physics

Abstract:We report on high resolution x-ray diffraction studies of the crystalline perfection and the relaxation of elastic strain in AlN grown by MBE on sapphire(0001). Thin (200–300 nm thick) AlN layers were grown with a very low density of threading screw dislocations. A density of 1.75−8.5×105 cm−2, the lowest value ever reported for III-Nitride epitaxial layers, was observed in a surface layer formed over a defective nucleation layer. Residual elastic strain was found in investigated AlN layers. Stress was found to be close to that expected from thermal expansion mismatch between the AlN and sapphire(0001). A model for the structural transformation of crystalline defects accounts for these observations.
Study of Defects and Nano-patterned Substrate Regulation Mechanism in AlN Epilayers

Wenwang Wei,Yi Peng,Yanlian Yang,Kai Xiao,Mudassar Maraj,Jia Yang,Yukun Wang,Wenhong Sun

DOI: https://doi.org/10.3390/nano12223937

2022-11-08

Abstract:The high crystal quality and low dislocation densities of aluminum nitride (AlN) grown on flat and nano-patterned sapphire substrate that are synthesized by the metal-organic chemical vapor deposition (MOCVD) method are essential for the realization of high-efficiency deep ultraviolet light-emitting diodes. The micro-strains of 0.18 × 10-3 cm-2 for flat substrate AlN and 0.11 × 10-3 cm-2 for nano-patterned substrate AlN are obtained by X-ray diffractometer (XRD). The screw and edge dislocation densities of samples are determined by XRD and transmission electron microscope (TEM), and the results indicate that the nano-patterned substrates are effective in reducing the threading dislocation density. The mechanism of the variation of the threading dislocation in AlN films grown on flat and nano-patterned substrates is investigated comparatively. The etch pit density (EPD) determined by preferential chemical etching is about 1.04 × 108 cm-2 for AlN grown on a nano-patterned substrate, which is slightly smaller than the results obtained by XRD and TEM investigation. Three types of etch pits with different sizes are all revealed on the AlN surface using the hot KOH etching method.
Fast Growth of Strain-Free AlN on Graphene-Buffered Sapphire

Yue Qi,Yunyu Wang,Zhenqian Pang,Zhipeng Dou,Tongbo Wei,Peng Gao,Shishu Zhang,Xiaozhi Xu,Zhenghua Chang,Bing Deng,Shulin Chen,Zhaolong Chen,Haina Ci,Ruoyu Wang,Fuzhen Zhao,Jianchang Yan,Xiaoyan Yi,Kaihui Liu,Hailin Peng,Zhiqiang Liu,Lianming Tong,Jin Zhang,Yujie Wei,Jinmin Li,Zhongfan Liu

DOI: https://doi.org/10.1021/jacs.8b03871

IF: 15

2018-09-03

Journal of the American Chemical Society

Abstract:We study the roles of graphene acting as a buffer layer for growth of an AlN film on a sapphire substrate. Graphene can reduce the density of AlN nuclei but increase the growth rate for an individual nucleus at the initial growth stage. This can lead to the reduction of threading dislocations evolved at the coalescence boundaries. The graphene interlayer also weakens the interaction between AlN and sapphire and accommodates their large mismatch in the lattice and thermal expansion coefficients; thus, the compressive strain in AlN and the tensile strain in sapphire are largely relaxed. The effective relaxation of strain further leads to a low density of defects in the AlN films. These findings reveal the roles of graphene in III-nitride growth and offer valuable insights into the efficient applications of graphene in the light-emitting diode industry.

chemistry, multidisciplinary
Period Size Effect Induced Crystalline Quality Improvement of AlN on a Nano-Patterned Sapphire Substrate

Nan Xie,Fujun Xu,Na Zhang,Jing Lang,Jiaming Wang,Mingxing Wang,Yuanhao Sun,Baiyin Liu,Weikun Ge,Zhixin Qin,Xiangning Kang,Xuelin Yang,Xinqiang Wang,Bo Shen

DOI: https://doi.org/10.7567/1347-4065/ab456d

IF: 1.5

2019-01-01

Japanese Journal of Applied Physics

Abstract:A comprehensive strategy of crystal quality control for AlN grown on a nano-patterned sapphire substrate has been explored based on the period size effect. It is found that the crystalline perfection of AlN can be greatly improved by enlarging the period size from 1.0 to 1.4 μm, and the X-ray diffraction ω-scan FWHM values for (0002) and (10-12) planes reach 162 and 181 arcsec, respectively, owning to the significantly reduced area ratio of the coalescence zone. Our results indicate the pattern design requires a critical balance between reducing the area ratio of the coalescence zone and decreasing the coalescence thickness.
Stress Evolution in AlN Growth on Nano-Patterned Sapphire Substrates

Nan Xie,Fujun Xu,Jiaming Wang,Yuanhao Sun,Baiyin Liu,Na Zhang,Jing Lang,Xuzhou Fang,Weikun Ge,Zhixin Qin,Xiangning Kang,Xuelin Yang,Xinqiang Wang,Bo Shen

DOI: https://doi.org/10.7567/1882-0786/ab582c

IF: 2.819

2019-01-01

Applied Physics Express

Abstract:The stress evolution behavior of AlN grown on nano-patterned substrates (NPSSs) has been investigated. It is found that there are two sources of the tensile stress for AlN grown on NPSSs. One originates from the coalescence of grain islands of the AlN nucleation layer, and then the voids provide a channel for the gradual release of the tensile stress to nearly stress-free state accompanied by the lateral growth process of the AlN columns on the mesas. The other originates from the contacting of adjacent columns to complete the coalescence process, which is responsible for the residual tensile stress in the top AlN epilayer after completing the coalescence. This understanding of the stress evolution is certainly of great significance in AlN-based material and devices.
Low-defect and stress-free AlN(0001) nanoprisms and microrods selectively grown on micro-patterned c -sapphire substrate by plasma-assisted molecular beam epitaxy

V. N. Jmerik,A. N. Semenov,D. V. Nechaev,S. I. Troshkov,D. D. Sakhno,P. A. Alekseev,D. A. Kirilenko,I. A. Eliseyev,V. Yu. Davydov,A. S. Abbas

DOI: https://doi.org/10.1063/5.0216809

IF: 4

2024-06-03

Applied Physics Letters

Abstract:This paper describes different growth modes of AlN layers on micro-cone patterned c-sapphire substrates (μ-PSSs) using plasma-assisted molecular beam epitaxy. Ordered arrays of AlN nanoprisms and microrods were selectively grown on the tips of μ-PSS's microcones according to a bottom-up formation mechanism using sequential migration enhanced and metal-modulated epitaxy (MME) under metal-rich growth conditions at 820 °C. Transmission electron microscopy revealed structurally perfect AlN regions above the tips of the μ-PSSs, which initiate as inverted nanopyramids with {1011 ̄} side faces, evolving into hexagonal nanoprisms with orientations of {11 ̄00} and (0001) for side and top surfaces, respectively. The diameter and height of these ordered hexagonal nanoprisms, which have a 60% probability of nucleating, were about 1 μm. Long-term MME growth of these nanoprisms in both vertical and lateral directions led to the formation of AlN(0001) microrods with a maximum possible diameter of two micrometers and a height of up to 6 μm. Atomic force microscopy revealed a mixed step-flow and 2D nucleation growth mechanism for the flat tops of these AlN nanoprisms and microrods with an average surface roughness of 1–2 monolayers. Micro-Raman spectroscopy demonstrated narrow E2 (high) linewidths of 3.8 and 4.2 cm−1 for essentially stress-free AlN nanoprisms and microrods, respectively.

physics, applied
Strain management and AlN crystal quality improvement with an alternating V/III ratio AlN superlattice

Bin Tang,Zehong Wan,Hongpo Hu,Liyan Gong,Shengjun Zhou

DOI: https://doi.org/10.1063/5.0048656

IF: 4

2021-06-28

Applied Physics Letters

Abstract:We report the metal-organic chemical vapor deposition growth of high-quality AlN on sapphire enabled by an alternating V/III ratio AlN superlattice. We demonstrated that the insertion of an alternating V/III ratio AlN superlattice facilitates the relaxation of tensile stress during growth and assists the annihilation of threading dislocations. Dislocation inclination was proposed to play a major role in the stress relaxation and dislocation reduction, which not only provides an effective misfit-dislocation component but also increases the dislocation reaction probability. By this method, crack-free 3.25 μm-thick AlN films were grown on flat sapphire substrate (FSS) and nano-patterned sapphire substrate (NPSS) at 1180 °C, and the full width at half maximum of (002)/(102) rocking curves was 204/408 and 152/323 arcsec for such AlN/FSS and AlN/NPSS templates.

physics, applied
Fast growth of crack-free thick AlN film on sputtered AlN/sapphire by introducing high-density nano-voids

Chenguang He,Wei Zhao,Hualong Wu,Ningyang Liu,Shan Zhang,Junze Li,Chuanyu Jia,Kang Zhang,Longfei He,Zhitao Chen,Bo Shen

DOI: https://doi.org/10.1088/1361-6463/ab97d9

2020-01-01

Abstract:Recently, there have been increasing demands for high-quality AlN/sapphire templates due to their applications in deep ultraviolet light-emitting diodes (DUV LEDs). To acquire a low threading dislocation density (TDD), AlN films are usually thickened to promote dislocation interaction. However, micro cracks are easily generated when their thicknesses exceed 2-3 mu m, severely deteriorating device performances. In this study, we successfully fabricated a 5.6 mu m-thick crack-free AlN film by employing a medium-temperature (MT) interlayer. It is revealed that high-density (1.7 x 10(10)cm(-2)) nano-voids were self-organized above the MT interlayer, which effectively destroyed the coherence between the MT interlayer and the subsequent epilayer by reducing contact area. As a result, tensile stress in the AlN film during growth was significantly decreased to 0.18 GPa, demonstrating a 64% reduction compared with its counterpart without nano-voids. In addition, the thick AlN film with embeded nano-voids allowed dislocations to climb long distances for mutual annihilation, so the TDD of the AlN film was significantly decreased to an extremely low value of 4.7 x 10(7)cm(-2). This technique paves the way for achieving high-performance DUV LEDs and other optoelectronic/electronic devices.
High Quality AlN Film Grown on a Nano-Concave-circle Patterned Si Substrate with an AlN Seed Layer

Jianfei Shen,Xuelin Yang,Danshuo Liu,Zidong Cai,Lai Wei,Nan Xie,Fujun Xu,Ning Tang,Xinqiang Wang,Weikun Ge,Bo Shen

DOI: https://doi.org/10.1063/5.0010285

IF: 4

2020-01-01

Applied Physics Letters

Abstract:We have investigated the growth of AlN films on hexagonal nano-concave-circle patterned Si substrates using metal–organic chemical vapor deposition. By depositing a thin AlN seed layer on the Si substrate before the pattern process, a high quality AlN film with a thickness of 2 μm has been obtained. The full width at half maximum values of X-ray diffraction rocking curves are as low as 409 and 677 arc sec for AlN (002) and (102) planes, respectively. Further experimental results indicate that the AlN seed layer can suppress the misorientation of the adjacent grains, as revealed by the lower twist and tilt angles of the mosaic structure, and thus only a few dislocations generated during the grain coalescence. In addition, the migration of Al adatoms is enhanced on the Al terminated surface of the AlN seed layer, which accelerates the coalescence process. All these improvements are attributed to the lower binding energy and diffusion barrier for Al adatoms on the Al terminated surface than that on the Si surface. Our results demonstrate an effective approach to obtain high quality AlN films for high performance ultraviolet light-emitting diodes on the Si substrate.
Effect of Grain Coalescence on Dislocation and Stress Evolution of GaN Films Grown on Nanoscale Patterned Sapphire Substrates

Zuojian Pan,Zhizhong Chen,Yiyong Chen,Haodong Zhang,Han Yang,Jingxin Nie,Chuhan Deng,Boyan Dong,Daqi Wang,Yuchen Li,Weihua Chen,Fei Jiao,Xiangning Kang,Chuanyu Jia,Zhiwen Liang,Qi Wang,Guoyi Zhang,Bo Shen

2023-08-21

Abstract:Two types of nucleation layers (NLs), including in-situ low-temperature grown GaN (LT-GaN) and ex-situ sputtered physical vapor deposition AlN (PVD-AlN), are applied on cone-shaped nanoscale patterned sapphire substrate (NPSS). The initial growth process of GaN on these two NLs is comparably investigated by a series of growth interruptions. The coalescence process of GaN grains is modulated by adjusting the three-dimensional (3D) temperatures. The results indicate that higher 3D temperatures reduce the edge dislocation density while increasing the residual compressive stress in GaN films. Compared to the LT-GaN NLs, the PVD-AlN NLs effectively resist Ostwald ripening and facilitate the uniform growth of GaN grains on NPSS. Furthermore, GaN films grown on NPSS with PVD-AlN NLs exhibit a reduction of over 50% in both screw and edge dislocation densities compared to those grown on LT-GaN NLs. Additionally, PVD-AlN NLs result in an increase of about 0.5 GPa in the residual compressive stress observed in GaN films.

Materials Science
AlN Thin Film Grown on Different Substrates by Hydride Vapor Phase Epitaxy

M. S. Sun,J. C. Zhang,J. Huang,J. F. Wang,K. Xu

DOI: https://doi.org/10.1016/j.jcrysgro.2015.11.040

IF: 1.8

2016-01-01

Journal of Crystal Growth

Abstract:AlN thin films have been grown on GaN/sapphire templates, 6 H-SiC and sapphire by hydride vapor phase epitaxy. The influence of growth conditions and substrates on the crystal qualities and growth mode has been investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). The results showed that the low pressure was favorable for high-quality AlN thin film growth around 1000°C. The full-width at half-maximum (FWHM) of (0002) XRD of 200-nm AlN thin film grown on GaN/sapphire, 6 H-SiC and sapphire are 220, 187 and 260arcs, respectively. While the corresponding counterparts of (10-12) are 1300, 662 and 2650arcs, respectively. Both suggested that low dislocation density in AlN grown on 6 H-SiC. The morphology of AlN thin film on sapphire showed islands without coalescence initially, and then changed to be coalescent with atomic steps at 1200nm. However, those for samples on 6 H-SiC and GaN/sapphire showed smooth surface with clear atomic steps at thickness of 200nm. The result indicated different growth modes of AlN on different substrates. It was believed that the different lattice mismatchs between AlN and substrates led to the different crystal qualities and growth modes.
A Study of GaN Nucleation and Coalescence in the Initial Growth Stages on Nanoscale Patterned Sapphire Substrates Via MOCVD

Yifan Chen,Zhizhong Chen,Junze Li,Yiyong Chen,Chengcheng Li,Jinglin Zhan,Tongjun Yu,Xiangning Kang,Fei Jiao,Shunfeng Li,Guoyi Zhang,Bo Shen

DOI: https://doi.org/10.1039/c8ce01450g

IF: 3.756

2018-01-01

CrystEngComm

Abstract:A study of GaN nucleation and coalescence behaviors in the initial growth stages on nanoscale patterned sapphire substrates (NPSS) is presented.
Epitaxial Growth of AlN Films on Sapphire Via a Multilayer Structure Adopting a Low- and High-Temperature Alternation Technique

X. Zhang,F. J. Xu,J. M. Wang,C. G. He,L. S. Zhang,J. Huang,J. P. Cheng,Z. X. Qin,X. L. Yang,N. Tang,X. Q. Wang,B. Shen

DOI: https://doi.org/10.1039/c5ce01159k

IF: 3.756

2015-01-01

CrystEngComm

Abstract:Epitaxial growth of AlN films on c-sapphire using a multilayer structure has been investigated by metal-organic chemical vapor deposition adopting multiple alternation cycles of low- and high-temperature (LT-HT) growth. It is found that the surface morphology and crystal quality can be greatly improved using three alternation cycles with X-ray diffraction omega-scan full width at half maximum values of 311 and 548 arcsec for the (0002) and (10-12) peaks, respectively, which are induced by the alternation of the three-dimensional (3D) and two-dimensional (2D) growth modes caused by the LT-HT process. The first 3D-2D cycle is found to play a major role in threading dislocation reduction, while the second and third cycles mainly account for tensile stress relaxation.

Realization of Low Dislocation Density AlN on a Small-Coalescence-area Nano-Patterned Sapphire Substrate

High-quality AlN Epitaxy on Nano-Patterned Sapphire Substrates Prepared by Nano-Imprint Lithography

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

Low-Defect-Density Aluminum Nitride (AlN) Thin Films Realized by Zigzag Macrostep-Induced Dislocation Redirection

4-inch 11 μm high-quality AlN thick films grown on nanopatterned sapphire substrates

Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy

Micro- and Nanostructure Analysis of Vapor-Phase-Grown AlN on Face-to-Face Annealed Sputtered AlN/Nanopatterned Sapphire Substrate Templates

High-quality AlN Epitaxy on Sapphire Substrates with Sputtered Buffer Layers

Low Density of Threading Dislocations in Aln Grown on Sapphire

Study of Defects and Nano-patterned Substrate Regulation Mechanism in AlN Epilayers

Fast Growth of Strain-Free AlN on Graphene-Buffered Sapphire

Period Size Effect Induced Crystalline Quality Improvement of AlN on a Nano-Patterned Sapphire Substrate

Stress Evolution in AlN Growth on Nano-Patterned Sapphire Substrates

Low-defect and stress-free AlN(0001) nanoprisms and microrods selectively grown on micro-patterned c -sapphire substrate by plasma-assisted molecular beam epitaxy

Strain management and AlN crystal quality improvement with an alternating V/III ratio AlN superlattice

Fast growth of crack-free thick AlN film on sputtered AlN/sapphire by introducing high-density nano-voids

High Quality AlN Film Grown on a Nano-Concave-circle Patterned Si Substrate with an AlN Seed Layer

Effect of Grain Coalescence on Dislocation and Stress Evolution of GaN Films Grown on Nanoscale Patterned Sapphire Substrates

AlN Thin Film Grown on Different Substrates by Hydride Vapor Phase Epitaxy

A Study of GaN Nucleation and Coalescence in the Initial Growth Stages on Nanoscale Patterned Sapphire Substrates Via MOCVD

Epitaxial Growth of AlN Films on Sapphire Via a Multilayer Structure Adopting a Low- and High-Temperature Alternation Technique