Abstract:High-quality GaN films on nanoscale patterned sapphire substrates (NPSSs) are required for micro-light-emitting diode (micro-LED) display. In this study, two types of nucleation layers (NLs), including in situ low-temperature grown GaN (LT-GaN) and ex situ physical vapour deposition AlN (PVD-AlN), are applied on cone-shaped NPSS. The coalescence process of GaN grains on the NPSS is modulated by adjusting the three-dimensional (3D) growth temperatures. Results show that low 3D temperatures help to suppress the Ostwald ripening of GaN grains on the NPSS, facilitating the uniform distribution of 3D GaN grains. Higher 3D temperatures lead to a decrease in the edge dislocation density, accompanied by an increase in residual compressive stress. Compared with LT-GaN NLs, PVD-AlN NLs can effectively improve the growth uniformity, suppress the tilting and twisting of GaN grains grown on NPSSs, and promote the orientation consistency of crystal facets during coalescence. The GaN films grown on NPSSs with PVD-AlN NLs exhibit a decrease in the coalescence time from 2000 s to 500 s, a reduction in dislocation densities from 2.8 x 108 cm-2 to 1.4 x 108 cm-2, and an increase in the residual compressive stress from 0.98 GPa to 1.41 GPa compared to those grown on LT-GaN NLs. This study elucidates trends in dislocation and stress evolution in GaN films on NPSSs with analysis of grain coalescence. The effect of grain coalescence on the dislocation and stress in GaN films grown on nanoscale patterned sapphire substrates with low-temperature grown GaN and physical vapour deposition AlN nucleation layers is comparably investigated.

A Study of GaN Nucleation and Coalescence in the Initial Growth Stages on Nanoscale Patterned Sapphire Substrates Via MOCVD

Crystalline Quality Improvement of GaN Coalesced Using Nano‐pss with Void‐embedded Nanostructure by MOVPE

Nucleation Mechanism of GaN Growth on Wet Etched Pattern Sapphire Substrates

Morphology Evolution of MOCVD Grown GaN Epitaxial Layers on Nanopss

Effect of Grain Coalescence on Dislocation and Stress Evolution of GaN Films Grown on Nanoscale Patterned Sapphire Substrates

Silane controlled three dimensional GaN growth and recovery stages on a cone-shape nanoscale patterned sapphire substrate by MOCVD

Effect of Grain Coalescence on Dislocation and Stress in GaN Films Grown on Nanoscale Patterned Sapphire Substrates

Lateral and Vertical Growth Study in the Initial Stages of GaN Growth on Sapphire with ZnO Buffer Layers by Hydride Vapor Phase Epitaxy

Nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate

Epitaxy N-polar GaN on vicinal Sapphire substrate by MOCVD

The Effect of Nitridation on Sputtering AlN on Composited Patterned Sapphire Substrate

Growth of Nonpolar A-Plane GaN on Nano-Patterned R-Plane Sapphire Substrates

Analyses of Surface Temperatures on Patterned Sapphire Substrate for the Growth of GaN with Metal Organic Chemical Vapor Deposition

Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD

Microstructure and Physical Properties of GaN Films on Sapphire Substrates

The Effect of a Nucleation Layer on Morphology and Grain Size in MOCVD-Grown β-Ga2O3 Thin Films on C-Plane Sapphire

High-quality AlN Epitaxy on Nano-Patterned Sapphire Substrates Prepared by Nano-Imprint Lithography

Micro- and Nanostructure Analysis of Vapor-Phase-Grown AlN on Face-to-Face Annealed Sputtered AlN/Nanopatterned Sapphire Substrate Templates

Study of surface morphology control and investigation of hexagonal indium nitride nanorods grown on GaN/sapphire substrate