Abstract:Growth mechanisms of (0001) wurtzite GaN films at low temperature are investigated by molecular dynamics simulations and experiments. The crystallization properties of GaN films deteriorate dramatically at low temperature due to the limited energy available for atomic surface migration and incorporation into the perfect lattice sites. In our simulation, growth interruption stage is periodically introduced and the as-deposited GaN films are treated with energy-carrying argon ions at this stage. The surface atoms located at the weak binding sites can acquire energy from the argon ions for secondary migration and incorporation into the perfect lattice sites. As a result, the crystallization properties of GaN films are significantly improved. GaN films are experimentally grown on sputtered AlN/sapphire substrates at 600°C via inductively coupled plasma metal organic chemical vapor deposition along with periodic argon plasma treatment. The as-deposited film acquires energy from the plasma, leading to significant improvement of the crystalline properties. The surface morphology of the GaN film demonstrates a noticeable smoothing effect, with an evident increase in grain size from submicron to micron level. Additionally, GaN film with the optimized surface morphology exhibits high c-axis and in-plane orientations, and the full width half maximums of (002) and (102) x-ray diffraction rocking curves are 0.25° and 0.32°, respectively. These results provide effective guidance for the growth of GaN films at low temperature.

Nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates

Nucleation Mechanism of GaN Growth on Wet Etched Pattern Sapphire Substrates

Epitaxial Growth of Gan on Porous Si (111) Substrate

A Study of GaN Nucleation and Coalescence in the Initial Growth Stages on Nanoscale Patterned Sapphire Substrates Via MOCVD

Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate

Epitaxial Growth Mechanisms of Single-Crystalline GaN on Single-Crystalline Graphene

Alternative Microstructure of GaN Nucleation Layers Grown by Low Pressure Metal-Organic Vapor Phase Epitaxy on Sapphire Substrate

Growth of Freestanding GaN Crystals on Three-Dimensional Mesh Porous Substrate by HVPE

Epitaxy N-polar GaN on vicinal Sapphire substrate by MOCVD

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

Low-temperature and Global Epitaxy of GaN on Amorphous Glass Substrates by Molecular Beam Epitaxy Via a Compound Buffer Layer

Lateral and Vertical Growth Study in the Initial Stages of GaN Growth on Sapphire with ZnO Buffer Layers by Hydride Vapor Phase Epitaxy

Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy

Epitaxial growth of GaN film on Si substrate

Growth of Nonpolar A-Plane GaN on Nano-Patterned R-Plane Sapphire Substrates

Growth and Characterization of Ge on GaN by LPCVD

Growth of GaN single crystal film on ZnO/Al2O3 substrate and its characteristics

Molecular dynamics simulations and experimental studies on low-temperature growth of GaN

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on sapphire substrates

Effect of Grain Coalescence on Dislocation and Stress Evolution of GaN Films Grown on Nanoscale Patterned Sapphire Substrates