Abstract:We report on the structural, electrical, and optical characterization of GaN epitaxial layers grown by metalorganic chemical vapor deposition (MOCVD) on SiNx and TiNx porous templates in order to reduce the density of extended defects. Observations by transmission electron microscopy (TEM) indicate an order of magnitude reduction in the dislocation density in GaN layers grown on TiNx and SiNx networks (down to similar to 10(8) cm(-2)) compared with the control GaN layers. Both SiNx and TiNx porous network structures are found to be effective in blocking the threading dislocation from penetrating into the upper layer. Supporting these findings are the results from X-Ray diffraction and low temperature photoluminescence (PL) measurements. The linewidth of the asymmetric X-Ray diffraction (XRD) (10 (1) under bar2) peak decreases considerably for the layers grown with the use of SiNx and TiNx layers, which generally suggests the reduction of edge and mixed threading dislocations. In general, further improvement is observed with the addition of a second SiNx layer. The room temperature decay times obtained from biexponential fits to time-resolved photoluminescence (TRPL) data are increased with the inclusion of SiNx and TiNx layers. TRPL results suggest that primarily point-defect and impurity-related nonradiative centers are responsible for reducing the lifetime. The carrier lifetime of 1.86 ns measured for a TiNx network sample is slightly longer than that for a 200 mu m-thick high quality freestanding GaN. Results on samples grown by a new technique called crack-assisted lateral overgrowth, which combines in situ deposition of SiNx mask and conventional lateral overgrowth, are also reported.

Epitaxial Growth of Gan on Porous Si (111) Substrate

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates

Characterization of Gan Epitaxial Films Grown on Sinx and Tinx Porous Network Templates

Growth of Strain Free GaN Layers on (0001) Oriented Sapphire by Using Quasi-Porous GaN Template

Investigation Of Preparation And Properties Of Epitaxial Growth Gan Film On Si(111) Substrate

Improvement of the Quality of a GaN Epilayer by Employing a SiN X Interlayer

Reduction Of Tensile Stress In Gan Grown On Si(111) By Inserting A Low-Temperature Aln Interlayer

GaN growth on Si and Si-SiO2-Si compliant substrates

The Impact of Nanoporous SiN X Interlayer Growth Position on High-Quality GaN Epitaxial Films

Influences of SiNx Interlayer on the Crystalline Quality and the Surface Morphology of GaN Epitaxial Films

Growth of GaN epitaxial films on polycrystalline diamond by metal-organic vapor phase epitaxy

Epitaxial Lateral Overgrowth Of Gan On Si Substrates By Hydride Vapor Phase Epitaxy

Growth of Freestanding GaN Crystals on Three-Dimensional Mesh Porous Substrate by HVPE

Epitaxial Growth Of Wurtzite Gan On Si(111) By A Vacuum Reactive Evaporation

Improvement of the Quality of GaN Epilayer by Combining a SiN X Interlayer and Changed GaN Growth Mode

Quality-Enhanced Gan Epitaxial Films on Si(111) Substrates by in Situ Deposition of Sin on A Three-Dimensional Gan Template

High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer

GaN grown on Si(111) with step-graded AlGaN intermediate layers