Abstract:The heteroepitaxial growth of vertically aligned gallium nitride (GaN) single-crystalline microrod arrays on silicon substrates was achieved with high reproducibility by using the plasma-enhanced chemical vapor deposition (PECVD) method in the furnace. By reducing the plasma power from 70 to 15 W, the crystal morphology of GaN varied from thin films to microrod arrays with the decreased V/III gas ratio. The growth of GaN crystals occurred in the vertical direction of the substrate and in the lateral direction of the growth axis via the self-catalytic vapor-liquid-solid mechanism (VLS mechanism) and the vapor-solid mechanism (VS mechanism), respectively, contributing to the formation of inverted hexagonal GaN cone microrods. Furthermore, the morphology of inverted hexagonal GaN cone microrods shows extremely small contact areas between the microrods and the substrate, suggesting the potential to solve the problems of stress accumulation and poor crystalline qualities of heteroepitaxy. With the raised growth temperature of GaN from 930 to 980 °C, the material quality was improved and the high crystalline qualities were obtained, owing to the successful surface migration of gallium atoms. However, the density of GaN microrods became lower with the increased growth temperature because the spatial temperature gradient was reduced and the evaporation of gallium was enhanced, leading to fewer gallium atoms precipitating and remaining on the substrate. The growth direction of vertically aligned GaN single-crystalline microrod arrays with the (002) crystal plane is along the [0001] orientation (c axis) and normal to the substrate surface, which may bring about many device applications in future studies.

Growth of Freestanding GaN Crystals on Three-Dimensional Mesh Porous Substrate by HVPE

The Growth of High-Quality and Self-Separation GaN Thick-Films by Hydride Vapor Phase Epitaxy

Preparation of freestanding GaN wafer by hydride vapor phase epitaxy on porous silicon

Hvpe Homoepitaxial Growth of High Quality Bulk Gan Using Acid Wet Etching Method and Its Mechanism Analysis

Preparation of Controllable Double-Selective Etched Porous Substrate for HVPE Growth of GaN Crystals with Excellent Optical Properties

Self-separation of Two-Inch-diameter Freestanding GaN by Hydride Vapor Phase Epitaxy and Heat Treatment of Sapphire

Synthesis And Properties Of Hvpe Nitride Substrates

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Direct Growth of Wafer-Scale Self-Separated GaN on Reusable 2D Material Substrates

Fabrication of 2-Inch Free-Standing GaN Substrate on Sapphire with a Combined Buffer Layer by HVPE

Heteroepitaxial Growth of Vertically-Aligned GaN Single-Crystalline Microrod Arrays on Silicon Substrates

Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxy

Silane controlled three dimensional GaN growth and recovery stages on a cone-shape nanoscale patterned sapphire substrate by MOCVD

X-ray Characterization of GaN Single Crystal Layers Grown by the Ammonothermal Technique on HVPE GaN Seeds and by the Sublimation Technique on Sapphire Seeds

Growth of GaN Quasi‐substrates by Hydride Vapor Phase Epitaxy

Growth of GaN epitaxial films on polycrystalline diamond by metal-organic vapor phase epitaxy

New Design of Nozzle Structures and Its Effect on the Surface and Crystal Qualities of Thick GaN Using a Horizontal HVPE Reactor

The impact of initial growth and substrate nitridation on thick GaN growth on sapphire by hydride vapor phase epitaxy

A Study of Gan Regrowth on the Micro-Faceted Gan Template Formed by in Situ Hcl Etching

Wafer-scale Heteroepitaxy GaN Film Free of High-Density Dislocation Region with Hexagonal 3D Serpentine Mask

Crystalline Quality Improvement of GaN Coalesced Using Nano‐pss with Void‐embedded Nanostructure by MOVPE