Abstract:The preparation of gallium nitride (GaN) film materials has significant importance in the semiconductor and thermoelectric sectors, serving as essential core materials for chips, power supply, and communication applications. The production of GaN thin films with reduced defect density has emerged as a significant and continuous subject of research. This work investigated the deposition process of GaN thin films on an aluminum nitride nanopattern substrate via molecular dynamics simulation. A comparison was made between the deposition process on the nanopatterned and unpatterned substrates. Additionally, the impact of the substrate temperature and nanopillar radius on the quality of the thin film was examined. Results demonstrate that the use of a nanopillar pattern on the substrate facilitates the acquisition of the deposited film with a larger number of wurtzite structures and a reduced presence of dislocations. In contrast to the persistent and extensive dislocations formed in the thin films on an unpatterned substrate, the dislocations present in the thin films on a patterned substrate exhibit shorter lengths and more complexity. By appropriately elevating the temperature of the substrate, it is possible to effectively decrease the complexity of the atomic structure and enhance the thin film density. The correlation between the stress and the temperature of the thin film deposited on the patterned substrate is weak. The deformation of nanopillars with a too small radius can cause the deposited atoms to move into the nanovoid, aggravating the irregularity of the thin film surface and the volume of defects. Moreover, the excessive size of the nanopillar at which the surface area of the substrate approaches that of an unpatterned substrate can increase the occurrence of dislocations in the deposited film. This observation implies that the nanovoid ratio inside the nanopillar has a substantial impact on the deposition quality of the thin film. This study focuses on the deposition of GaN films on substrates with nanopatterns at the nanoscale, assesses the impact of nanopatterning degree on the growth quality of film, and acquires data on the temperature range and structural characteristics of high-quality films exhibiting high density and few dislocations.

Heteroepitaxial Growth of Vertically-Aligned GaN Single-Crystalline Microrod Arrays on Silicon Substrates

Structural Modulation of GaN Nanowires Grown in High-Density Plasma Environment

Hot-Wall MOCVD for High-Quality Homoepitaxy of GaN: Understanding Nucleation and Design of Growth Strategies

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Crystallographic Alignment of High Density Gallium Nitride Nanowire Arrays

Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition

Alignment Control and Atomically-Scaled Heteroepitaxial Interface Study of GaN Nanowires.

Growth of Freestanding Gallium Nitride (gan) Through Polyporous Interlayer Formed Directly During Successive Hydride Vapor Phase Epitaxy (HVPE) Process

Crystallographic Plane and Topography-Dependent Growth of Semipolar InGaN Nanorods on Patterned Sapphire Substrates by Molecular Beam Epitaxy

Geometrically-Controlled Microscale Patterning and Epitaxial Lateral Overgrowth of Nitrogen-Polar GaN

Controlled Growth of Well-Aligned Zno Mirco/Nanorod Arrays on Gan Substrates Using A Novel Solution Method

Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

Growth of Freestanding GaN Crystals on Three-Dimensional Mesh Porous Substrate by HVPE

Growth of 2D GaN Single Crystals on Liquid Metals

Growth of GaN micro/nanolaser arrays by chemical vapor deposition.

Homo-epitaxial Growth of High Crystal Quality GaN Thin Films by Plasma Assisted–molecular Beam Epitaxy

High Quality GaN Layers Grown on SiC Substrates with AlN Buffers by Metalorganic Chemical Vapor Deposition

The Growth of High-Quality and Self-Separation GaN Thick-Films by Hydride Vapor Phase Epitaxy

Study on Growth Quality of GaN Deposition on Nanopillar-Patterned Substrates: Microstructure Characterization and Crystalline Quality Optimization