Abstract:Well-aligned GaN nanowires are promising candidates for building high-performance optoelectronic nanodevices. In this work, we demonstrate the epitaxial growth of well-aligned GaN nanowires on a [0001]-oriented sapphire substrate in a simple catalyst-assisted chemical vapor deposition process and their alignment control. It is found that the ammonia flux plays a key role in dominating the initial nucleation of GaN nanocrystals and their orientation. Typically, significant improvement of the GaN nanowire alignment can be realized at a low NH3 flow rate. X-ray diffraction and cross-sectional scanning electron microscopy studies further verified the preferential orientation of GaN nanowires along the [0001] direction. The growth mechanism of GaN nanowire arrays is also well studied based on cross-sectional high-resolution transmission electron microscopy (HRTEM) characterization and it is observed that GaN nanowires have good epitaxial growth on the sapphire substrate following the crystallographic relationship between (0001)GaN∥(0001)sapphire and (101[combining macron]0)GaN∥(112[combining macron]0)sapphire. Most importantly, periodic misfit dislocations are also experimentally observed in the interface region due to the large lattice mismatch between the GaN nanowire and the sapphire substrate, and the formation of such dislocations will favor the release of structural strain in GaN nanowires. HRTEM analysis also finds the existence of "type I" stacking faults and voids inside the GaN nanowires. Optical investigation suggests that the GaN nanowire arrays have strong emission in the UV range, suggesting their crystalline nature and chemical purity. The achievement of aligned GaN nanowires will further promote the wide applications of GaN nanostructures toward diverse high-performance optoelectronic nanodevices including nano-LEDs, photovoltaic cells, photodetectors etc.

Growth of Large-Scale Vertically Aligned GaN Nanowires and Their Heterostructures with High Uniformity on SiOx by Catalyst-Free Molecular Beam Epitaxy

Alignment Control and Atomically-Scaled Heteroepitaxial Interface Study of GaN Nanowires.

Vertically aligned ZnO nanowire arrays on GaN and SiC substrates

Horizontal GaN Nanowires Grown on Si (111) Substrate: the Effect of Catalyst Migration and Coalescence.

Heteroepitaxial Growth of Vertically-Aligned GaN Single-Crystalline Microrod Arrays on Silicon Substrates

Heteroepitaxial Patterned Growth of Vertically Aligned and Periodically Distributed ZnO Nanowires on GaN Using Laser Interference Ablation

Molecular Beam Epitaxial Growth and Characterization of Al(Ga)N Nanowire Deep Ultraviolet Light Emitting Diodes and Lasers

High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN

Gan heteroepitaxial growth techniques

Hot-Wall MOCVD for High-Quality Homoepitaxy of GaN: Understanding Nucleation and Design of Growth Strategies

Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiO2/Si(100) for Monolithic Optoelectronic Integration

Growth of Catalyst-Free Epitaxial InAs Nanowires on Si Wafers Using Metallic Masks.

Self-catalyzed Molecular Beam Epitaxy Growth and Their Optoelectronic Properties of Vertical GaAs Nanowires on Si(111)

Self-catalyzed Metal Organic Chemical Vapor Deposition Growth of Vertical Β-Ga2o3 Nanowire Arrays.

GaN-Based LEDs Grown on Graphene-Covered SiO2/Si (100) Substrate

Growth of High-Crystallinity Uniform GaAs Nanowire Arrays by Molecular Beam Epitaxy*

Controlled Lateral Epitaxial Growth in Vertical Β-Ga2o3 Nanowires on Sapphire by MOCVD

Development of Vertical High-Vacuum MOCVD and Its Applications in GaN Epitaxial Growth and GaN-Based Device Fabrication

Controlled Epitaxial Growth of Vertically Well-Aligned ZnGa2O4 Nanowire Arrays on Sapphire Via a Novel Vapor-Liquid-Solid Process

Lithography-Free Nanoscale Patterned Growth of Gaas on Si(001) with Sub-100-Nm Silica Nanoparticles by Molecular Beam Epitaxy

Epitaxial Growth of Bottom-Crosslinked Znga2o4 Nanowire Arrays on C-Plane Gan/Al2o3 Substrate