Hot-filament-assisted growth of straight SiOx nanowires for optoelectronic application

Tianxiao Nie,Zhigang Chen,MuTong Niu,Jonathon Wu,Jinping Zhang,Yueqin Wu,YongLiang Fan,Xinju Yang,Zuimin Jiang,Jin Zou
DOI: https://doi.org/10.1021/jp403588p
2013-01-01
Abstract:Uniform and straight amorphous SiOx nanowires with a length of several micrometers and, an average diameter of 100 nm were synthesized by directly heating GeSi alloy film substrate with high melting-point tungsten. Systematically comparative experiments suggest that both the tungsten and GeSi alloy film play an important role in the formation of straight amorphous SiOx nanowire. Through detailed morphological, structural and chemical characterizations using electron microscopy, the contact angle anisotropy mechanism is suggested for the growth of the straight SiOx nanowires.
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