Abstract:Well-aligned GaN nanowires are promising candidates for building high-performance optoelectronic nanodevices. In this work, we demonstrate the epitaxial growth of well-aligned GaN nanowires on a [0001]-oriented sapphire substrate in a simple catalyst-assisted chemical vapor deposition process and their alignment control. It is found that the ammonia flux plays a key role in dominating the initial nucleation of GaN nanocrystals and their orientation. Typically, significant improvement of the GaN nanowire alignment can be realized at a low NH3 flow rate. X-ray diffraction and cross-sectional scanning electron microscopy studies further verified the preferential orientation of GaN nanowires along the [0001] direction. The growth mechanism of GaN nanowire arrays is also well studied based on cross-sectional high-resolution transmission electron microscopy (HRTEM) characterization and it is observed that GaN nanowires have good epitaxial growth on the sapphire substrate following the crystallographic relationship between (0001)GaN∥(0001)sapphire and (101[combining macron]0)GaN∥(112[combining macron]0)sapphire. Most importantly, periodic misfit dislocations are also experimentally observed in the interface region due to the large lattice mismatch between the GaN nanowire and the sapphire substrate, and the formation of such dislocations will favor the release of structural strain in GaN nanowires. HRTEM analysis also finds the existence of "type I" stacking faults and voids inside the GaN nanowires. Optical investigation suggests that the GaN nanowire arrays have strong emission in the UV range, suggesting their crystalline nature and chemical purity. The achievement of aligned GaN nanowires will further promote the wide applications of GaN nanostructures toward diverse high-performance optoelectronic nanodevices including nano-LEDs, photovoltaic cells, photodetectors etc.

Understanding homoepitaxial growth of horizontal kinked GaN nanowires

Alignment Control and Atomically-Scaled Heteroepitaxial Interface Study of GaN Nanowires.

Synthesis and Characterization of Kinked GaAs Nanowires by Sb Surfactant

Horizontal GaN Nanowires Grown on Si (111) Substrate: the Effect of Catalyst Migration and Coalescence.

Hetero-epitaxial Growth and Mechanism of One-Dimensional InSb Nanostructures on GaAs Substrate by MOCVD

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Growth of oriented GaN nanowires by controlling nucleation conditions

Structural Modulation of GaN Nanowires Grown in High-Density Plasma Environment

Control of growth orientation of GaN nanowires

Epitaxial Growth of Vertically Free-Standing Ultra-Thin Silicon Nanowires.

Investigation on Epitaxial Lateral Overgrowth of InGaN/GaN Multi-Quantum-Well Nanowires

Polarity Driven Simultaneous Growth of Free-Standing and Lateral GaAsP Epitaxial Nanowires on GaAs (001) Substrate

Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires

Dislocation-induced nanoparticle decoration on a GaN nanowire

Crystal Phase And Growth Orientation Dependence Of Gaas Nanowires On Nixgay Seeds Via Vapor-Solid-Solid Mechanism

Heteroepitaxial Patterned Growth of Vertically Aligned and Periodically Distributed ZnO Nanowires on GaN Using Laser Interference Ablation

Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

In-plane Epitaxial Growth of Silicon Nanowires and Junction Formation on Si(100) Substrates.

<110>-growth orientation dependence of Ga<sub>2</sub>O<sub>3</sub> nanowires on Cu<sub>3</sub>As seeds via vapor-solid-solid mechanism

Epitaxial Growth of Bottom-Crosslinked Znga2o4 Nanowire Arrays on C-Plane Gan/Al2o3 Substrate

Single-crystalline Wurtzite GaN Nanowires and Zigzagged Nanostructures Fabricated by Sublimation Sandwich Method