Abstract:Well-aligned GaN nanowires are promising candidates for building high-performance optoelectronic nanodevices. In this work, we demonstrate the epitaxial growth of well-aligned GaN nanowires on a [0001]-oriented sapphire substrate in a simple catalyst-assisted chemical vapor deposition process and their alignment control. It is found that the ammonia flux plays a key role in dominating the initial nucleation of GaN nanocrystals and their orientation. Typically, significant improvement of the GaN nanowire alignment can be realized at a low NH3 flow rate. X-ray diffraction and cross-sectional scanning electron microscopy studies further verified the preferential orientation of GaN nanowires along the [0001] direction. The growth mechanism of GaN nanowire arrays is also well studied based on cross-sectional high-resolution transmission electron microscopy (HRTEM) characterization and it is observed that GaN nanowires have good epitaxial growth on the sapphire substrate following the crystallographic relationship between (0001)GaN∥(0001)sapphire and (101[combining macron]0)GaN∥(112[combining macron]0)sapphire. Most importantly, periodic misfit dislocations are also experimentally observed in the interface region due to the large lattice mismatch between the GaN nanowire and the sapphire substrate, and the formation of such dislocations will favor the release of structural strain in GaN nanowires. HRTEM analysis also finds the existence of "type I" stacking faults and voids inside the GaN nanowires. Optical investigation suggests that the GaN nanowire arrays have strong emission in the UV range, suggesting their crystalline nature and chemical purity. The achievement of aligned GaN nanowires will further promote the wide applications of GaN nanostructures toward diverse high-performance optoelectronic nanodevices including nano-LEDs, photovoltaic cells, photodetectors etc.

Investigation on Epitaxial Lateral Overgrowth of InGaN/GaN Multi-Quantum-Well Nanowires

Synthesis and Properties of InGaN/GaN Multiple Quantum Well Nanowires on Si (111) by Molecular Beam Epitaxy

Fabrication and Investigation of InGaN/GaN Multi-quantum-well Nanowire Light Emitting Diode

Selective Area Epitaxy of Semipolar InGaN/GaN Multiple Quantum Wells on GaN Microfacets Using Crossover Stripe Patterns

Epitaxy and Optical Properties of InGaN/GaN Multiple Quantum Wells on GaN Hexagonal Pyramids Template

InGaN/GaN multi-quantum-well nanowires and light emitting

Influence of InGaN layer growth temperature on luminescence properties of InGaN/GaN multiple quantum wells

Nanostructure analysis of InGaN/GaN quantum wells based on semi-polar-faced GaN nanorods

Structural and Optical Properties of InGaN/GaN Multiple Quantum Wells Structure for Ultraviolet Emission

Improved Quantum Efficiency in Semipolar $(1\bar{1}01)$ InGaN/GaN Quantum Wells Grown on GaN Prepared by Lateral Epitaxial Overgrowth

Structural and Optical Properties of InGaN/GaN Multiple Quantum Well Light Emitting Diodes Grown on (1122) Facet GaN/sapphire Templates by Metalorganic Chemical Vapor Deposition

Cathodoluminescence and Scanning Transmission Electron Microscopy Study of InGaN/GaN Quantum Wells in Core-Shell GaN Nanowires

Morphology evolution and emission properties of InGaN/GaN multiple quantum wells grown on GaN microfacets using crossover stripe patterns by selective area epitaxy

Optical and structural investigation on InGaN/GaN multiple quantum well light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition

Morphological Dependent Indium Incorporation in InGaN/GaN Multiple Quantum Wells Structure Grown on 4° Misoriented Sapphire Substrate

Effects of Surface Migration on InGaN/GaN Multiple Quantum Wells Selectively Grown on Periodic Stripe Openings Separated by Large SiO2 Covered Spacing on Si (111) Substrates

Selective Epitaxy of Ingan/Gan Multiple Quantum Wells on Gan Side Facets

Temperature Dependent Growth of InGaN/GaN Single Quantum Well

Alignment Control and Atomically-Scaled Heteroepitaxial Interface Study of GaN Nanowires.

Study of Well Width in Ingan/Gan Multiple Quantum Well Light-Emitting Diodes

Inter-facet composition modulation of III-nitride nanowires over pyramid textured Si substrates by stationary molecular beam epitaxy