Abstract:We demonstrate a series of InGaN/GaN double quantum well nanostructure elements. We grow a layer of 2 {\mu}m undoped GaN template on top of a (0001)-direction sapphire substrate. A 100 nm SiO2 thin film is deposited on top as a masking pattern layer. This layer is then covered with a 300 nm aluminum layer as the anodic aluminum oxide (AAO) hole pattern layer. After oxalic acid etching, we transfer the hole pattern from the AAO layer to the SiO2 layer by reactive ion etching. Lastly, we utilize metal-organic chemical vapor deposition to grow GaN nanorods approximately 1.5 {\mu}m in size. We then grow two layers of InGaN/GaN double quantum wells on the semi-polar face of the GaN nanorod substrate under different temperatures. We then study the characteristics of the InGaN/GaN quantum wells formed on the semi-polar faces of GaN nanorods. We report the following findings from our study: first, using SiO2 with repeating hole pattern, we are able to grow high-quality GaN nanorods with diameters of approximately 80-120 nm; second, photoluminescence (PL) measurements enable us to identify Fabry-Perot effect from InGaN/GaN quantum wells on the semi-polar face. We calculate the quantum wells' cavity thickness with obtained PL measurements. Lastly, high resolution TEM images allow us to study the lattice structure characteristics of InGaN/GaN quantum wells on GaN nanorod and identify the existence of threading dislocations in the lattice structure that affects the GaN nanorod's growth mechanism.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to improve the quality of InGaN epitaxial layers by preparing InGaN/GaN double - quantum - well structures on GaN nanorods grown on semi - polar surfaces, and to study the optical and material properties of these quantum wells. Specifically, the paper focuses on the following aspects: 1. **Reduce dislocations**: Use a SiO₂ layer with a repeating hole pattern as a mask to grow high - quality GaN nanorods in order to reduce threading dislocations (TDs) caused by the lattice mismatch between the sapphire substrate and GaN. 2. **Optimize growth conditions**: By controlling different growth temperatures (750°C, 700°C, and 650°C), study the growth quality of InGaN/GaN double - quantum - wells and their influence on optical properties. 3. **Verify optical properties**: Use photoluminescence (PL) measurements to verify the optical properties of InGaN/GaN double - quantum - wells, especially the observed Fabry - Perot effect, which indicates that the quantum wells form a resonant cavity. 4. **Structural analysis**: Characterize the samples by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) to study the morphology of GaN nanorods and the microstructure of InGaN/GaN double - quantum - wells. In summary, this paper aims to improve the quality of InGaN/GaN double - quantum - wells by optimizing growth conditions and structural design, and to gain a deep understanding of their optical and structural properties. These studies are of great significance for the development of high - performance nitride - based optoelectronic devices.

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