Abstract:<p class="a-plus-plus">InGaN nanowires (NWs) are grown on pyramid textured Si substrates by stationary plasma-assisted molecular beam epitaxy (PA-MBE). The incidence angles of the highly directional source beams vary for different pyramid facets, inducing a distinct inter-facet modulation of the In content of the InGaN NWs, which is verified by spatial element distribution analysis. The resulting multi-wavelength emission is confirmed by photoluminescence (PL) and cathodoluminescence (CL). Pure GaN phase formation dominates on certain facets, which is attributed to extreme local growth conditions, such as low active N flux. On the same facets, InGaN NWs exhibit a morphology change close to the pyramid ridge, indicating inter-facet atom migration. This cross-talk effect due to inter-facet atom migration is verified by a decrease of the inter-facet In content modulation amplitude with shrinking pyramid size. A detailed analysis of the In content variation across individual pyramid facets and element distribution line profiles reveals that the cross-talk effect originates mainly from the inter-facet atom migration over the convex pyramid ridge facet boundaries rather than the concave base line facet boundaries. This is understood by first-principles calculations showing that the pyramid baseline facet boundary acts as an energy barrier for atom migration, which is much higher than that of the ridge facet boundary. The influence of the growth temperature on the inter-facet In content modulation is also presented. This work gives deep insight into the composition modulation for the realization of multi-color light-emitting devices based on the monolithic growth of InGaN NWs on pyramid textured Si substrates.</p>

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Temperature Dependent Growth of InGaN/GaN Single Quantum Well

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Characteristics of Nanoporous Ingan/Gan Multiple Quantum Wells

Growth and properties of blue and amber complex light emitting InGaN/GaN multi-quantum wells

Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition

Photoluminescence Study of InGaN/GaN Quantum Dots Grown on Passivated GaN Surface

Synthesis and Properties of InGaN/GaN Multiple Quantum Well Nanowires on Si (111) by Molecular Beam Epitaxy

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Abnormal Stranski-Krastanov Mode Growth of Green InGaN Quantum Dots: Morphology, Optical Properties, and Applications in Light-Emitting Devices

Investigation on Epitaxial Lateral Overgrowth of InGaN/GaN Multi-Quantum-Well Nanowires

Nano-fabrication and Related Optical Properties of InGaN/GaN Nanopillars.

Epitaxy and Optical Properties of InGaN/GaN Multiple Quantum Wells on GaN Hexagonal Pyramids Template

Multicolored-light Emission from InGaN/GaN Multiple Quantum Wells Grown by Selective-Area Epitaxy on Patterned Si(100) Substrates

Photoluminescence Tailoring of InGaN/GaN Quantum Wells with Silver Nanoparticle‐assembled Films

InGaN/GaN multi-quantum-well nanowires and light emitting

Inter-facet composition modulation of III-nitride nanowires over pyramid textured Si substrates by stationary molecular beam epitaxy

Growth and Optical Properties of Highly Uniform and Periodic InGaN Nanostructures

Studies on Carrier Recombination in GaN/AlN Quantum Dots in Nanowires with a Core–Shell Structure