Growth and Optical Properties of Highly Uniform and Periodic InGaN Nanostructures

Peng Chen,Ao Chen,Soo Jin Chua,Jen Ngee Tan
DOI: https://doi.org/10.1002/adma.200602110
IF: 29.4
2007-01-01
Advanced Materials
Abstract:InGaN nanodot arrays with improved optical properties, attributed to the strong localization of photogenerated carriers in the size-homogeneous nanodots, grown by nanoscale selective area epitaxy (NSAE) on electron-beam lithographically patterned templates are presented. The figure shows an array of 60 nm diameter cone-shaped InGaN nanodots with 200 nm spacing, and a single nanodot (inset).
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