Abstract:The authors present an in situ study of the effect of nitrogen plasma pulse time on the temporal evolution of the surface morphology of InN growth on a-plane sapphire at 250 °C by plasma assisted atomic layer epitaxy (ALEp). The growth surface evolution was monitored in real-time using grazing incidence small angle x-ray scattering (GISAXS) measurements at an x-ray incidence angle of 0.8°. Nitrogen plasma pulse time (tp) was varied between 15 and 30 s in 5-s steps, and for all tp, the near specular scattering broadens and correlated peaks develop and evolve along the Yoneda Wing (YW). For tp ≥ 20 s, a YW with one correlated length scale evolves. At the end of the growth, the longest correlated length scale is 16.54 nm for tp = 25 s. Porod analysis of GISAXS intensity at high qy for tp = 25 s shows the formation of mounded shapes at the early stage of nucleation that transitioned to cylinders after about 3 unit cells of InN growth. Additionally, at tp = 25 s, the growth rate is highest with root mean square surface roughness and carbon impurity levels at or below atomic force microscopy and x-ray photoelectron spectroscopy sensitivity limits, respectively. At tp < 25 s, the growth surface may be undersaturated and at tp > 30 s, it appears that trimethylindium precursor molecules start to decompose, resulting in higher carbon content in the film. Thus, the nature of GISAXS correlated length scale directly correlates with the material quality. Additional ex situ characterizations reveal an electron mobility of 6–31 cm2/V s for a 3–5 nm thick InN film on a-plane sapphire, which is similar to the reported value of 30 cm2/V s for a 1300 nm thick InN film grown by molecular beam epitaxy directly on sapphire. Thus, the combination of in situ synchrotron x-ray analysis and ex situ characterization is a powerful approach to develop understanding of the growth mechanisms of ALEp of III-N materials in order to improve the quality by reducing impurities and broaden material applications.

In situ spectroscopic ellipsometry and RHEED monitored growth of InN nanocolumns by molecular beam epitaxy

Molecular Beam Epitaxy Growth of GaN, AlN and InN

Rapid growth and characterization of InN nanocolumns on InGaN buffer layers at a low ratio of N/In

InGaN Nanocolumn Growth Self-Induced by In-Situ Annealing and Ion Irradiation During Growth Process with Molecular Beam Epitaxy Method

In Situ Spectroscopic Ellipsometry in Plasma-Assisted Molecular Beam Epitaxy of Inn under Different Surface Stoichiometries

Advances in InN epitaxy and its material control by MBE towards novel InN-based QWs

Study of surface morphology control and investigation of hexagonal indium nitride nanorods grown on GaN/sapphire substrate

Structural Investigations of Epitaxial Inn by X-Ray Photoelectron Diffraction and X-Ray Diffraction

Controlled Growth and Characterization of Non-tapered InN Nanowires on Si(111) Substrates by Molecular Beam Epitaxy

High-Precision Determination of Lattice Constants and Structural Characterization of Inn Thin Films

Step-Flow Growth of In-Polar InN by Molecular Beam Epitaxy

Growth and Characterization of GaAsN Bulk Layer and (in)gaasn Quantum-Well Structures

Growth mechanisms in molecular beam epitaxy for GaN-(In,Ga)N core-shell nanowires emitting in the green spectral range

MOCVD Growth of InN Films on Sapphire Substrates

Growth-dependent Phonon Characteristics in InN Thin Films

Nonpolar Growth And Characterization Of Inn Overlayers On Vertically Oriented Gan Nanorods

Improvement on Epitaxial Grown of InN by Migration Enhanced Epitaxy

Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering

Study of High Indium InXGa1-XN Alloys with Synchrotron Radiation

Transmission Electron Microscopy Study of Epitaxial InN Thin Films Grown on C -Plane Sapphire

Epitaxial Growth of High Quality InSb1-xNx by MOCVD