Abstract:Epitaxial growth of InN on (0001) sapphire with an AlN buffer layer was studied by migration-enhanced epitaxy, which is composed of an alternative supply of pure In atoms and N2 plasma. A series of samples were prepared with different substrate temperatures ranging from 360 to 590 °C. As-grown films were characterized by x-ray diffraction (XRD), reflective high-energy electron diffraction, atomic-force microscopy (AFM), and Hall measurements. Both XRD θ–2θ and ω scans show that the full width at half maximum of the (0002) peak nearly continuously decrease with increasing growth temperature, while InN grown at 590 °C shows the poorest surface morphology from AFM. It is suggested that three-dimensional characterization is necessary for an accurate evaluation of the quality of the InN epilayer. Hall mobility as high as 542 cm2/V s was achieved on film grown at ∼500 °C with an electron concentration of 3×1018 cm−3 at room temperature. These results argue against the common view that nitrogen vacancies are responsible for the high background n-type conductivity of InN. To illuminate the relationship between Hall mobility and carrier concentration, the electrical properties of all InN films grown recently were summarized.

Molecular Beam Epitaxy Growth of GaN, AlN and InN

Rapid growth and characterization of InN nanocolumns on InGaN buffer layers at a low ratio of N/In

In situ spectroscopic ellipsometry and RHEED monitored growth of InN nanocolumns by molecular beam epitaxy

Temperature‐dependent Growth and Characterization of N‐polar InN Films by Molecular Beam Epitaxy

Effect of Epitaxial Temperature on N-polar InN Films Grown by Molecular Beam Epitaxy

Step-Flow Growth of In-Polar InN by Molecular Beam Epitaxy

Selective Area Growth of InN Nanocolumns: Effect of Lattice Polarity

Improvement on Epitaxial Grown of InN by Migration Enhanced Epitaxy

MBE Growth and Characterization of Device-Quality Thick InN Epilayers; Comparison Between N-polarity and In-polarity Growth Processes

Growth of Non-Polar A-Plane and Cubic InN on R-Plane Sapphire by Molecular Beam Epitaxy

Growth and characterization of AlInN/GaN superlattices

Influence of GaN Buffer Layer for InN Growth

InGaN Nanocolumn Growth Self-Induced by In-Situ Annealing and Ion Irradiation During Growth Process with Molecular Beam Epitaxy Method

Nonpolar Growth And Characterization Of Inn Overlayers On Vertically Oriented Gan Nanorods

Growth mechanisms in molecular beam epitaxy for GaN-(In,Ga)N core-shell nanowires emitting in the green spectral range

MBE Growth of Entire-Indium-composition-tunable InxGa1-xN Alloy

Epitaxial Growth and Characteristics of Nonpolar a-Plane InGaN Films with Blue-Green-Red Emission and Entire In Content Range

Epitaxial Growth And Structural Analysis Of Aln/Gan Heterostructures

Catalyst-free selective area growth of InN nanocolumns by MBE

Advances in InN epitaxy and its material control by MBE towards novel InN-based QWs

On the Crystalline Structure, Stoichiometry and Band Gap of Inn Thin Films