Abstract:Unintentionally doped InN has been grown onto an atomically flat AlN intermediate layer on top of the Si(111) substrate using plasma‐assisted molecular beam epitaxy (PA‐MBE). Though there are lots of micrometer‐size indium droplets randomly distributed on the top of the surface, the highest electron mobility of this InN thin film measured at room temperature by van der Pauw method is still higher than 1000 cm2/V s with a carrier concentration of 5–8.9 × 1018 cm–3. A symmetrical X‐ray rocking curve is measured and the full‐width‐at‐half‐maximum (FWHM) of this sample is 1089 arcsec. In the meantime, the threading dislocation (TD) density of this material is estimated to around 9.8 × 108 cm–2 – 7.5 × 109 cm–2 depending on the probing regions that are studied by the etching technique and field‐emission scanning electron microscopy (FE‐SEM). (2 × 1) in situ reflection high‐energy electron diffraction (RHEED) patterns show that this sample is grown under In‐rich environment with possible In‐terminated surface. From the FE‐SEM pictures which were taken from the samples after 10 minutes etching in hydrochloride, the surface morphology shows In‐polarity‐like patterns that coincide with those procured in RHEED. To select and grow a high‐quality laminated AlN as intermediate layer is believed to be the major step in obtaining this high electron mobility InN thin film on Si substrate. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Step-Flow Growth of In-Polar InN by Molecular Beam Epitaxy

MBE Growth and Characterization of Device-Quality Thick InN Epilayers; Comparison Between N-polarity and In-polarity Growth Processes

Molecular Beam Epitaxy Growth of GaN, AlN and InN

Effect of Epitaxial Temperature on N-polar InN Films Grown by Molecular Beam Epitaxy

Temperature‐dependent Growth and Characterization of N‐polar InN Films by Molecular Beam Epitaxy

Growth of High Mobility InN Film on Ga‐Polar GaN Substrate by Molecular Beam Epitaxy for Optoelectronic Device Applications

Growth of Non-Polar A-Plane and Cubic InN on R-Plane Sapphire by Molecular Beam Epitaxy

Improvement on Epitaxial Grown of InN by Migration Enhanced Epitaxy

Growth of Thick InN by Molecular Beam Epitaxy

In situ spectroscopic ellipsometry and RHEED monitored growth of InN nanocolumns by molecular beam epitaxy

Advances in InN epitaxy and its material control by MBE towards novel InN-based QWs

Step-flow Growth of Al Droplet Free AlN Epilayers Grown by Plasma Assisted Molecular Beam Epitaxy

Rapid growth and characterization of InN nanocolumns on InGaN buffer layers at a low ratio of N/In

Growth of A-Plane Inn on R-Plane Sapphire with A Gan Buffer by Molecular-Beam Epitaxy

Growth of compositionally uniform $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with low relaxation degree on GaN by molecular beam epitaxy

Controllable step-flow growth of GaN on patterned freestanding substrate

Threading Dislocations in In-polar InN Films and Their Effects on Surface Morphology and Electrical Properties

InGaN Nanocolumn Growth Self-Induced by In-Situ Annealing and Ion Irradiation During Growth Process with Molecular Beam Epitaxy Method

Unintentionally Doped InN Grown Onto an Atomically Flat AlN Intermediate Layer Using Plasma‐assisted Molecular Beam Epitaxy

Growth Of Inn For Heterojunction Field Effect Transistor Applications By Plasma Enhanced Mbe

Epitaxial Growth and Characteristics of Nonpolar a-Plane InGaN Films with Blue-Green-Red Emission and Entire In Content Range