Abstract:The lack of internal polarization fields in cubic group-III nitrides makes them promising arsenic-free contenders for next-generation high-performance electronic and optoelectronic applications. In particular, cubic InxGa1-xN semiconductor alloys promise band gap tuning across and beyond the visible spectrum, from the near-ultraviolet to the near-infrared. However, realization across the complete composition range has been deemed impossible due to a miscibility gap corresponding to the amber spectral range. In this study, we use plasma-assisted molecular beam epitaxy (PAMBE) to fabricate cubic InxGa1-xN films on c-GaN/AlN/3C-SiC/Si template substrates that overcome this challenge by careful adjustment of the growth conditions, conclusively closing the miscibility gap. X-ray diffraction reveals the composition, phase purity, and strain properties of the InxGa1-xN films. Scanning transmission electron microscopy reveals a CuPt-type ordering on the atomistic scale in highly alloyed films with x(In) ≈ 0.5. Layers with much lower and much higher indium content exhibit statistical distributions of the cations Ga and In. Notably, this CuPt-type ordering results in a spectrally narrower emission compared to that of statistically disordered zincblende materials. The emission energies of the films range from 3.24 to 0.69 eV and feature a quadratic bowing parameter of b = 2.4 eV. In contrast, the LO-like phonon modes that are observed by Raman spectroscopy exhibit a one-mode behavior and shift linearly from c-GaN to c-InN.

Growth of Non-Polar A-Plane and Cubic InN on R-Plane Sapphire by Molecular Beam Epitaxy

Growth of A-Plane Inn on R-Plane Sapphire with A Gan Buffer by Molecular-Beam Epitaxy

Growth of A-Plane Inn Film and Its Thz Emission

Influence of GaN Buffer Layer for InN Growth

Investigation of Structural and Optical Anisotropy of M-Plane InN Films Grown on Γ-Lialo2(1 0 0) by Metal Organic Chemical Vapour Deposition

Growth of Thick InN by Molecular Beam Epitaxy

Improvement on Epitaxial Grown of InN by Migration Enhanced Epitaxy

Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1- xN

Growth of Nonpolar A-Plane GaN on Nano-Patterned R-Plane Sapphire Substrates

Step-Flow Growth of In-Polar InN by Molecular Beam Epitaxy

Growth of High Mobility InN Film on Ga‐Polar GaN Substrate by Molecular Beam Epitaxy for Optoelectronic Device Applications

Characterization of InN Grown Directly on Sapphire Substrate Using Plasma‐Enhanced Metal Organic Chemical Vapor Deposition

Epitaxial Growth and Characteristics of Nonpolar a-Plane InGaN Films with Blue-Green-Red Emission and Entire In Content Range

Transmission Electron Microscopy Study of Epitaxial InN Thin Films Grown on C -Plane Sapphire

Molecular Beam Epitaxy Growth of GaN, AlN and InN

Growth and Characterization of Inn Thin Films on Sapphire by Mocvd

Non-polar A-Plane ZnO Films Grown on R-Al2o3 Substrates Using GaN Buffer Layers

Nonpolar A-Plane Light-Emitting Diode with an In-Situ Sinx Interlayer on R-Plane Sapphire Grown by Metal-Organic Chemical Vapour Deposition

Study of (112̄0) non polar a-plane GaN on the (11-02) r-plane sapphire

Effects of V/III Ratio on the Growth of a -Plane GaN Films

The High Mobility Inn Film Grown by Mocvd with Gan Buffer Layer