Abstract:In this work, we prepared epitaxial InN on (0001) sapphire with an AlN or GaN buffer layer by molecular beam epitaxy (MBE). A series of samples were grown with different thickness under the optimized growth conditions. Films were characterized by x-ray diffraction (XRD), reflective high-energy electron diffraction (RHEED), atomic-force microscopy (AFM), transmission electron microscopy (TEM) and Hall measurements. By extrapolating the fitted curve of sheet carrier density vs. film thickness to zero film thickness, a strong residual sheet charge was derived, which may be located at the interface between the buffer layer and the InN film, or at the near-surface. It was found that for InN film on AlN buffer, the residual sheet charge is about 4.3×1013 cm−2, while for InN films on GaN buffer, the residual sheet charge is about 2.5×1013 cm−2. At present, we tentatively believe that the residual charge is surface charge accumulation similar to what is observed at the InAs surface. InN samples with Hall mobility beyond 1300 cm2/Vs and carrier concentration below 2×1018 cm−3 were routinely achieved in this study. The first study on InN-based FET structures was performed. Amorphous AlN was used as the barrier material, which was prepared by migration enhanced epitaxy (MEE) at low growth temperature. It was found that the surface morphology is improved after an AlN barrier layer is added to InN. Hg was used as a back-to-back Schottky metallization. Very low leakage current and weak rectifying behavior were observed.

Growth of High Mobility InN Film on Ga‐Polar GaN Substrate by Molecular Beam Epitaxy for Optoelectronic Device Applications

High-Electron-Mobility Inn Epilayers Grown On Silicon Substrate

Improvement on Epitaxial Grown of InN by Migration Enhanced Epitaxy

The High Mobility Inn Film Grown by Mocvd with Gan Buffer Layer

Unintentionally Doped InN Grown Onto an Atomically Flat AlN Intermediate Layer Using Plasma‐assisted Molecular Beam Epitaxy

High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

High‐Mobility Two‐Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy

Step-Flow Growth of In-Polar InN by Molecular Beam Epitaxy

Study of Interface Properties of InN and InN-Based Heterostructures by Molecular Beam Epitaxy

Studies of High Field Transport in a High-Quality InN Film by Ultrafast Raman Spectroscopy

Growth of Non-Polar A-Plane and Cubic InN on R-Plane Sapphire by Molecular Beam Epitaxy

Growth Of Inn For Heterojunction Field Effect Transistor Applications By Plasma Enhanced Mbe

High Electron Mobility in Nearly-Dislocation-free Hexagonal InN

Growth of Thick InN by Molecular Beam Epitaxy

MBE Growth of Entire-Indium-composition-tunable InxGa1-xN Alloy

MBE Growth and Characterization of Device-Quality Thick InN Epilayers; Comparison Between N-polarity and In-polarity Growth Processes

Optical Studies of High-Field Carrier Transport of InN Thick Film Grown on GaN

Influence of GaN Buffer Layer for InN Growth

N-polar GaN Epitaxy and High Electron Mobility Transistors

Study of InN/GaN interfaces using molecular dynamics